BCW32 BCW32 is an NPN general purpose amplifier transistor from ON Semiconductor. It features a 32V collector-emitter voltage, 500mA collector current, and a 200MHz transition frequency.
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BCW32

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BCW32 is an NPN general purpose amplifier transistor from ON Semiconductor. It features a 32V collector-emitter voltage, 500mA collector current, and a 200MHz transition frequency.
Total Stock: 2,435 pcs

BCW32 Available from 1 distributor

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BCW32 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Alternate Package Designations
Base-Emitter On Voltage
Collector-Base Breakdown Voltage
Collector-Base Voltage (Maximum Rating)
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Emitter-Base Voltage (Maximum Rating)
Frequency
ICBO (Maximum @ VCB=32 V, IE=0)
ICBO (Maximum @ VCB=32 V, IE=0, TA=100 °C)
Mounting Type
Noise Figure
Operating Temperature
Output Capacitance
Power
Supplier Device Package
Supplier Package
Tape & Reel
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCW32 Description

Short technical summary and product information.

The BCW32 is an NPN bipolar junction transistor designed for general purpose amplification and switching applications. It is manufactured by ON Semiconductor (formerly Fairchild Semiconductor). The device is rated for a maximum collector-emitter voltage of 32V and a continuous collector current of 500mA, with a power dissipation of 350mW. Key electrical characteristics include a DC current gain (hFE) of 200 minimum at 2mA, a typical gain-bandwidth product of 200MHz, and a low collector-emitter saturation voltage of 250mV at 10mA. The transistor also features a low noise figure of 10dB, making it suitable for low-noise amplifier stages. The BCW32 is housed in a surface-mount SOT-23 package (also known as SOT-23-3, TO-236-3, or SC-59). It is designed for operation over a junction temperature range of -55°C to +150°C. The device is commonly used in general purpose amplification, driver stages, and low-power switching circuits. Its compact package and moderate power handling make it ideal for space-constrained designs.

BCW32 Quick Information

Product Type: NPN Bipolar Junction Transistor
Canonical Name: BCW32 NPN General Purpose Amplifier Transistor
Subcategory: Single NPN

BCW32 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BCW32 Features

  • NPN general purpose amplifier transistor.
  • Rated for 32V collector-emitter voltage.
  • Supports up to 500mA collector current.
  • 200MHz typical transition frequency.
  • Surface-mount SOT-23 package.

BCW32 Applications

  • General purpose amplification in audio circuits.
  • Driver stages for low-power loads.
  • Low-noise preamplifier stages.
  • Switching applications up to 500mA.

BCW32 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BCW32?

The maximum collector-emitter voltage (VCEO) is 32V.

What package is the BCW32 available in?

The BCW32 is available in a surface-mount SOT-23 package (SOT-23-3, also designated as TO-236-3 or SC-59).

What is the operating temperature range of the BCW32?

The junction temperature range is -55°C to +150°C.

Is the BCW32 RoHS compliant?

The BCW32 is listed as RoHS3 Compliant, but this status is unverified. Verify with the manufacturer or distributor.

What is the DC current gain (hFE) of the BCW32?

The minimum hFE is 200 at IC=2mA, VCE=5V, with a typical value of 450.

What is the transition frequency of the BCW32?

The typical current gain bandwidth product (fT) is 200MHz at IC=2mA, VCE=5V.

What is the collector-emitter saturation voltage?

The maximum VCE(sat) is 250mV at IC=10mA, IB=0.5mA.

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