| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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133 pcs
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133 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BCW29,215 is a general-purpose PNP bipolar junction transistor designed for various electronic applications. It is housed in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum DC collector current of -100mA and a maximum collector emitter voltage (Vceo) of -32V. The transistor also features a maximum collector base voltage (VCBO) of -32V and a maximum emitter base voltage (VEBO) of -5V. With a minimum DC current gain (hFE) of 90 and a maximum transition frequency (ft) of 100MHz, it is capable of handling moderate signal frequencies.
The operating temperature range for this device is from -65°C to 150°C, ensuring reliability in diverse environmental conditions. The maximum power dissipation (Pd) is rated at 250mW.
This transistor is supplied in a 3-pin SOT-23 package with surface mounting. Its dimensions are 3mm in length and 1.1mm in height.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC collector current is -100mA.
The maximum collector-emitter voltage is -32V.
The maximum power dissipation is 250mW.
The BCW29,215 is available in a surface-mount SOT-23 package.
The operating temperature range is -65°C to 150°C.
The maximum transition frequency is 100MHz.
The minimum DC current gain is 90.