| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,300 pcs
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2300 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The BCW29 from NXP Semiconductors is a PNP bipolar junction transistor (BJT) suitable for general-purpose switching and amplification tasks. This transistor is housed in a compact SOT23 plastic package, making it ideal for surface-mount applications where space is a constraint.
Key electrical characteristics include a low collector current capability of up to 100 mA and a low collector-emitter voltage rating of 32 V. These specifications make the BCW29 well-suited for low-power electronic circuits.
The operating temperature range for the BCW29 is from -65 °C to +150 °C, with a storage temperature range also spanning -65 °C to +150 °C. The maximum junction temperature is 150 °C, and the total power dissipation is limited to 250 mW at an ambient temperature of 25 °C.
Its NPN complements are the BCW31 and BCW32. The BCW29 is a reliable component for various electronic designs requiring a general-purpose PNP transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BCW29 is 32V.
The maximum continuous collector current (IC) for the BCW29 is 100mA.
The BCW29 is supplied in a SOT23 plastic surface mount package.
The BCW29 can operate in an ambient temperature range of -65°C to +150°C.
The NPN complements for the BCW29 are the BCW31 and BCW32.