BCV62C,215 The BCV62C is a PNP general-purpose double transistor in a small SOT-143B SMD plastic package, featuring matched pairs for temperature-independent applications.
Mfr Part #:

BCV62C,215

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The BCV62C is a PNP general-purpose double transistor in a small SOT-143B SMD plastic package, featuring matched pairs for temperature-independent applications.
Total Stock: 141,000 pcs

BCV62C,215 Available from 1 distributor

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BCV62C,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101 Qualified
Automotive Grade
Collector Current - Continuous
Collector Current - Peak
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
DC Current Gain (Minimum @ VCE=5 V, IC=100 µA)
DC Current Gain (Minimum/Maximum @ Vce=-5 V, Ic=-2 mA)
Emitter-Base Voltage (VEBO)
Junction Temperature (TJ)
Military Grade
Mounting Type
Number of Pins
Operating Temperature Range
Power Dissipation (Ptot)
Storage Temperature
Storage Temperature Range
Tape & Reel
Thermal Resistance (Rth(j-a))
Transistor Type

BCV62C,215 Description

Short technical summary and product information.

The BCV62C is a PNP general-purpose double transistor from Nexperia, housed in a compact SOT-143B surface-mount package. It integrates two matched PNP transistors, making it ideal for applications requiring consistent electrical characteristics between devices, such as current mirrors and temperature-compensated circuits.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -30 V, a continuous collector current of -100 mA, and a peak collector current of -200 mA. The DC current gain (hFE) for the BCV62C variant is specified at 420 to 800 under test conditions of VCE = -5 V and IC = -2 mA. Each transistor also has a minimum hFE of 100 at VCE = -5 V and IC = -100 µA.

 

The device is AEC-Q101 qualified, suitable for automotive applications. It has a maximum power dissipation of 250 mW per device on an FR4 PCB and an operating junction temperature range of -65 to +150 °C. The SOT-143B package has 4 pins and is designed for surface mount assembly.

BCV62C,215 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BCV62C PNP General-Purpose Double Transistor
Subcategory: Matched Pair Transistor

BCV62C,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCV62C,215 Features

  • PNP dual matched pair transistor.
  • Maximum collector-emitter voltage of -30 V.
  • Continuous collector current up to -100 mA.
  • DC current gain range of 420 to 800.
  • AEC-Q101 qualified for automotive use.

BCV62C,215 Applications

  • Ideal for current mirror circuits.
  • Suitable for temperature-compensated designs.
  • Used in low-voltage analog signal processing.
  • Applicable in automotive electronic modules.

BCV62C,215 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the package type for the BCV62C?

The BCV62C is housed in a SOT-143B surface-mount package.

What is the operating temperature range of the BCV62C?

The BCV62C has an operating temperature range of -65 to +150 °C.

Is the BCV62C RoHS compliant?

The RoHS status is listed as compliant but is unverified.

What is the maximum collector current for the BCV62C?

The maximum continuous collector current is -100 mA, with a peak of -200 mA.

What is the DC current gain (hFE) of the BCV62C?

The DC current gain (hFE) is 420 to 800 at VCE = -5 V and IC = -2 mA.

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