| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,832 pcs
|
2832 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,832 pcs
|
2832 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Dimensions | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The NXP Semiconductors BCV62B,215 is a dual PNP bipolar transistor array designed for general-purpose applications. It is housed in a compact SOT-143B surface-mount plastic package.
Key electrical specifications include a breakdown voltage of 30V and a continuous collector current of 0.1A (100mA). The device features a DC current gain (hFE) of 220 and a maximum power dissipation of 250mW. Its gain bandwidth product is 100MHz.
This transistor array operates within a temperature range of -65°C to 150°C. The dimensions of the SOT-143B package are 3mm in length, 1.4mm in width, and 1mm in height. It is suitable for surface mounting.
The BCV62B,215 is designed for applications requiring working points independent of temperature and current mirrors, offering low current and low voltage characteristics with matched pairs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (collector to emitter) of the BCV62B,215 is 30V.
The continuous collector current for the BCV62B,215 is 0.1A.
The maximum power dissipation for the BCV62B,215 is 250mW.
The operating temperature range for the BCV62B,215 is -65°C to 150°C.
The BCV62B,215 is in a SOT-143B package.
The BCV62B,215 is packaged in Cut Tape (CT).