| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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190 pcs
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190 pcs | On Request | 1 | On Request | On Request | 1006+ | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The NXP Semiconductors BCV62B is a general-purpose, dual PNP bipolar transistor array. It is designed for applications where working points are independent of temperature and for use in current mirrors. This component offers low current and low voltage characteristics, making it suitable for various electronic designs.
The BCV62B features matched pairs and has a breakdown voltage of 30V. Its continuous collector current is rated at 0.1A, with a power dissipation of 250 mW. The transistor array operates within a temperature range of -65°C to 150°C.
Packaged in a compact SOT-143 surface-mount plastic package, the BCV62B is designed for efficient integration into printed circuit boards. Its dimensions are 3mm in length, 1.4mm in width, and 1mm in height. The mounting style is surface mount, facilitating automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BCV62B is a PNP transistor array.
The maximum power dissipation for the BCV62B is 250 mW.
The minimum DC current gain (hFE) for the BCV62B is 100.
The BCV62B operates from -65 C to 150 C.
The breakdown voltage (Collector to Emitter) for the BCV62B is 30 V.
The continuous collector current rating for the BCV62B is 0.1A.
The BCV62B is supplied in a SOT-143 package.