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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,999 pcs
|
9999 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Base Current (IB) | |
| Base-Emitter Saturation Voltage (VBEsat) | |
| Collector-Base Capacitance (Ccb) | |
| Collector-Base Cutoff Current (ICBO) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ IC=0.5 A, VCE=5 V) | |
| DC Current Gain (hFE) (Minimum @ IC=10 mA, VCE=5 V) | |
| DC Current Gain (hFE) (Minimum @ IC=100 µA, VCE=1 V) | |
| Emitter-Base Cutoff Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Peak Base Current (IBM) | |
| Peak Collector Current (ICM) | |
| Power | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Thermal Resistance (Junction to Soldering Point) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCV47E6327HTSA1 is an NPN silicon Darlington transistor manufactured by Infineon Technologies, designed for general-purpose AF amplification applications. It offers a collector-emitter voltage (VCEO) of 60V and a continuous collector current rating of 500mA, with a peak collector current capability of 800mA. The device provides a high DC current gain (hFE) of at least 10000 at IC=100mA and VCE=5V, making it suitable for high-gain switching and amplification stages.
This transistor is housed in a standard SOT23 surface-mount package (PG-SOT23) and is qualified according to AEC Q101 automotive standards. It has a maximum power dissipation of 360mW and a junction temperature range of -65°C to 150°C. The BCV47 is the complementary NPN type to the PNP Darlington transistors BCV26 and BCV46.
The device is Pb-free and RoHS compliant, ensuring environmental compatibility. With its high current gain and compact SOT23 footprint, the BCV47E6327HTSA1 is well-suited for space-constrained designs requiring high amplification factors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
| 18,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 60V.
The maximum continuous collector current (IC) is 500mA, with a peak current (ICM) of 800mA.
The BCV47E6327HTSA1 is available in a TO-236-3, SC-59, SOT-23-3 surface mount package, with a supplier device package of PG-SOT23.
The minimum DC current gain is 2000 at IC=100µA, 4000 at IC=10mA, 10000 at IC=100mA, and 2000 at IC=0.5A, all at VCE=5V.
Yes, the BCV47E6327HTSA1 is RoHS3 compliant as verified by the datasheet.
The maximum junction temperature (Tj) is 150°C, and the storage temperature range is -65°C to 150°C.
The complementary PNP Darlington transistors are the BCV26 and BCV46 from Infineon Technologies.