| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BCV29 is an NPN small-signal Darlington transistor suitable for preamplifier input applications. It offers a high DC current gain, with values up to 20,000 specified at 100 mA collector current and 5 V collector-emitter voltage for the BCV29 variant. The device can handle a maximum collector current of 500 mA and features a low collector-emitter voltage rating of up to 60 V (for BCV49).
The transistor is packaged in a surface-mount SOT89 plastic package, which includes a collector pad for good heat transfer. The mounting type is surface mount. The operating temperature range is -65 °C to +150 °C, with a maximum junction temperature of 150 °C. The total power dissipation is rated at 1.3 W at 25 °C ambient temperature when mounted on a printed-circuit board with a 1 cm² copper pad.
Key electrical characteristics include a collector-base voltage of up to 80 V (BCV49) and an emitter-base voltage of 10 V. Saturation voltages are also specified, with VCEsat at a maximum of 1 V and VBEsat at a maximum of 1.5 V under specific test conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (DC) for the BCV29 is 500 mA.
The maximum collector-emitter voltage (VCES) for the BCV29 is 30 V.
The DC current gain (hFE) for the BCV29 is a minimum of 20,000 at IC = 100 mA and VCE = 5 V.
The BCV29 is available in a surface mount SOT89 package.
The operating ambient temperature range for the BCV29 is -65 °C to +150 °C.