BCR562E6327 Infineon BCR562E6327 is a PNP pre-biased digital transistor with 50V collector-emitter voltage and 500mA collector current. It features a built-in 4.7kΩ base resistor and comes in a SOT-23 surface-mount package.
Mfr Part #:

BCR562E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BCR562E6327 is a PNP pre-biased digital transistor with 50V collector-emitter voltage and 500mA collector current. It features a built-in 4.7kΩ base resistor and comes in a SOT-23 surface-mount package.
✓ Total Stock: 452 pcs
$ Price Range: $0.08 - $0.72

BCR562E6327 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
452 pcs
452 pcs On Request 1 On Request On Request 13+ On Request On Request

BCR562E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCR562E6327 Description

Short technical summary and product information.

The BCR562E6327 from Infineon Technologies is a PNP pre-biased bipolar junction transistor, also known as a digital transistor. It integrates a 4.7kΩ base resistor, simplifying circuit design by reducing external component count. This device is designed for switching and amplification applications where space and component count are critical.

 

Key electrical specifications include a maximum collector-emitter voltage of 50V and a maximum collector current of 500mA. The DC current gain (hFE) is minimum 60 at 50mA collector current and 5V Vce. The saturation voltage is 300mV maximum at 2.5mA base current and 50mA collector current. The transition frequency is 150MHz, suitable for moderate-speed switching. Maximum power dissipation is 330mW.

 

The transistor is housed in a surface-mount SOT-23 package (also known as TO-236-3 or SC-59), with supplier device package PG-SOT23-3-3. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). This part is commonly used in load switching, interface circuits, and driver stages where a pre-biased transistor simplifies design.

BCR562E6327 Quick Information

Product Type: Pre-Biased Bipolar Junction Transistor (BJT)
Series: BCR
Canonical Name: Infineon Technologies BCR562E6327 PNP Pre-Biased Digital Transistor
Subcategory: Pre-Biased

BCR562E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCR562E6327 Estimated Pricing

Qty Low High
1+ $0.72 $0.72
10+ $0.49 $0.49
100+ $0.31 $0.31
500+ $0.19 $0.19
1,000+ $0.15 $0.15
3,000+ $0.12 $0.12
6,000+ $0.11 $0.11
9,000+ $0.10 $0.10
24,000+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCR562E6327 Features

  • PNP pre-biased digital transistor with integrated resistor.
  • Maximum collector-emitter voltage of 50V.
  • Maximum collector current of 500mA.
  • Built-in 4.7kΩ base resistor.
  • Surface-mount SOT-23 package.

BCR562E6327 Applications

  • Ideal for load switching applications.
  • Used in interface and driver circuits.
  • Suitable for logic level conversion.
  • Common in portable electronic devices.

BCR562E6327 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

50V.

What package does the BCR562E6327 come in?

It is available in TO-236-3, SC-59, and SOT-23-3 surface-mount packages, with supplier device package PG-SOT23-3-3.

Is the BCR562E6327 RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the value of the integrated base resistor?

4.7 kΩ.

What is the minimum DC current gain (hFE)?

60 at 50mA collector current and 5V Vce.

What is the maximum power dissipation?

330 mW.

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