BCR555E6327HTSA1 PNP pre-biased digital transistor from Infineon Technologies. Features 50V collector-emitter voltage, 500mA collector current, and built-in bias resistors (R1=2.2kΩ, R2=10kΩ) in a SOT23-3 surface-mount package.
Mfr Part #:

BCR555E6327HTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
PNP pre-biased digital transistor from Infineon Technologies. Features 50V collector-emitter voltage, 500mA collector current, and built-in bias resistors (R1=2.2kΩ, R2=10kΩ) in a SOT23-3 surface-mount package.
✓ Total Stock: 263 pcs
$ Price Range: $0.46 - $0.60

BCR555E6327HTSA1 Available from 1 distributor

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✓ Non-Authorised
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BCR555E6327HTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Power
Resistor
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCR555E6327HTSA1 Description

Short technical summary and product information.

The BCR555E6327HTSA1 is a PNP silicon digital transistor from Infineon Technologies, designed with built-in bias resistors for simplified circuit design. It integrates a 2.2kΩ input resistor (R1) and a 10kΩ base-emitter resistor (R2), reducing external component count.

 

This transistor offers a maximum collector-emitter voltage of 50V and a collector current rating of 500mA. DC current gain (hFE) is minimum 70 at 50mA, 5V. The collector-emitter saturation voltage is typically 300mV at 50mA. Transition frequency is 150MHz typical.

 

Housed in a compact SOT23-3 surface-mount package (PG-SOT23), it is suitable for space-constrained applications. Maximum power dissipation is 330mW at 79°C soldering point temperature. Junction temperature range is -65°C to 150°C.

 

The device is Pb-free (RoHS compliant) and qualified according to AEC Q101 for automotive applications. It is ideal for switching and amplification in automotive, industrial, and consumer electronics where space and component count are critical.

BCR555E6327HTSA1 Quick Information

Product Type: PNP Pre-Biased Digital Transistor
Canonical Name: Infineon BCR555E6327HTSA1 PNP Pre-Biased Digital Transistor
Subcategory: Pre-Biased Digital Transistor

BCR555E6327HTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free (RoHS compliant)

BCR555E6327HTSA1 Estimated Pricing

Qty Low High
1+ $0.60 $0.60
10+ $0.48 $0.48
100+ $0.46 $0.46
3,000+ $0.46 $0.46

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCR555E6327HTSA1 Features

  • PNP pre-biased digital transistor with integrated resistors.
  • Maximum collector-emitter voltage of 50V.
  • Collector current rating up to 500mA.
  • Built-in bias resistors: R1=2.2kΩ, R2=10kΩ.
  • AEC Q101 qualified for automotive applications.

BCR555E6327HTSA1 Applications

  • Ideal for automotive electronic control units.
  • Used in low-power switching and driver circuits.
  • Suitable for space-constrained surface-mount designs.
  • Reduces component count in bias network applications.

BCR555E6327HTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the BCR555E6327HTSA1?

SOT23-3 (TO-236-3, SC-59) surface-mount package.

Is the BCR555E6327HTSA1 RoHS compliant?

The datasheet states it is Pb-free (RoHS compliant), but this is unverified. Treat as low confidence.

What type of transistor is the BCR555E6327HTSA1?

PNP pre-biased digital transistor.

What is the maximum collector-emitter voltage?

50V.

What is the maximum collector current?

500mA.

What is the DC current gain (hFE)?

Minimum 70 at IC=50mA, VCE=5V.

Is the BCR555E6327HTSA1 qualified for automotive use?

Yes, it is qualified according to AEC Q101.

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