BCR191E6327 BCR191E6327 is a PNP pre-biased digital transistor from Infineon Technologies. It features 50V Vce, 100mA Ic, 200mW power dissipation, and a built-in 22kΩ base resistor in a surface-mount SOT-23 package.
Mfr Part #:

BCR191E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
BCR191E6327 is a PNP pre-biased digital transistor from Infineon Technologies. It features 50V Vce, 100mA Ic, 200mW power dissipation, and a built-in 22kΩ base resistor in a surface-mount SOT-23 package.
✓ Total Stock: 9,000 pcs
$ Price Range: $0.06 - $0.47

BCR191E6327 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,000 pcs
9000 pcs On Request 1 On Request On Request 15+ On Request On Request

BCR191E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Package / Case
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCR191E6327 Description

Short technical summary and product information.

The BCR191E6327 is a PNP pre-biased bipolar junction transistor (BJT) manufactured by Infineon Technologies. It integrates a 22kΩ base resistor, simplifying circuit design by reducing external component count. This digital transistor is designed for switching and amplification applications where space and component reduction are critical.

 

Key electrical specifications include a collector-emitter breakdown voltage of 50V, a continuous collector current rating of 100mA, and a power dissipation of 200mW. The DC current gain (hFE) is a minimum of 50 at 5mA collector current and 5V Vce. The saturation voltage is 300mV maximum at 500µA base current and 10mA collector current. The transition frequency is 200MHz, suitable for moderate-speed switching.

 

The device is housed in a surface-mount package compatible with TO-236-3, SC-59, and SOT-23-3 footprints, specifically the PG-SOT23-3-1 supplier package. It is RoHS3 compliant and has an MSL level of 1 (unlimited floor life). The pre-biased configuration makes it ideal for use in digital logic interfaces, driver circuits, and low-power switching applications.

BCR191E6327 Quick Information

Product Type: Pre-Biased Bipolar Transistor
Series: BCR191
Canonical Name: Infineon Technologies BCR191E6327 PNP Pre-Biased Digital Transistor
Subcategory: Pre-Biased

BCR191E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCR191E6327 Estimated Pricing

Qty Low High
1+ $0.47 $0.47
10+ $0.33 $0.33
100+ $0.21 $0.21
500+ $0.13 $0.13
1,000+ $0.11 $0.11
3,000+ $0.10 $0.10
6,000+ $0.08 $0.08
9,000+ $0.08 $0.08
24,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCR191E6327 Features

  • PNP pre-biased digital transistor with 22kΩ resistor.
  • Rated for 50V collector-emitter voltage.
  • 100mA continuous collector current.
  • 200mW power dissipation capability.
  • Surface-mount SOT-23 package.

BCR191E6327 Applications

  • Ideal for digital logic interface circuits.
  • Used in low-power switching applications.
  • Suitable for driver circuits in portable devices.
  • Reduces component count in compact designs.

BCR191E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BCR191E6327?

50V.

What package does the BCR191E6327 come in?

It is available in TO-236-3, SC-59, SOT-23-3 packages, specifically the PG-SOT23-3-1 supplier package.

Is the BCR191E6327 RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the base resistor value?

22kΩ.

What is the DC current gain (hFE)?

Minimum 50 at 5mA, 5V.

What is the maximum power dissipation?

200mW.

What is the transition frequency?

200MHz.

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