| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,319 pcs
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5319 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,919 pcs
|
2919 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BCR183E6327 is a PNP silicon transistor designed for general-purpose small signal switching applications. It offers a maximum collector-emitter voltage of 50V and a maximum collector current of 100mA.
This transistor features a single configuration with a built-in resistor, making it suitable for various circuit designs. It operates with a minimum DC current gain (hFE) of 30 and has a nominal transition frequency (fT) of 200 MHz.
The BCR183E6327 is housed in a small outline rectangular package, designed for surface mounting. It utilizes gull wing terminals with a matte tin finish, ensuring reliable connections.
This component is RoHS3 compliant and lead-free, suitable for modern electronic manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the BCR183E6327 is 100 mA.
The maximum collector-emitter voltage for the BCR183E6327 is 50 V.
The minimum DC current gain (hFE) for the BCR183E6327 is 30.
The nominal transition frequency (fT) for the BCR183E6327 is 200 MHz.
The BCR183E6327 is a PNP silicon transistor of the general-purpose small signal type.
The BCR183E6327 is supplied in a small outline rectangular package designed for surface mounting with gull wing terminals.
The BCR183E6327 is RoHS3 compliant.