| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
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| Tape & Reel | |
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The BCR169E6327 is a PNP pre-biased bipolar junction transistor (BJT) from Infineon Technologies, designed for digital switching applications. It integrates a 4.7kΩ base resistor, simplifying circuit design by reducing external component count. Key electrical specifications include a collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 100mA, and a power dissipation of 200mW. The transistor offers a DC current gain (hFE) of 120 minimum at 5mA, 5V, and a transition frequency (fT) of 200MHz. The saturation voltage is 300mV maximum at 500µA base current and 10mA collector current. The device is housed in a surface-mount SOT-23 package (TO-236-3, SC-59, SOT-23-3) with a supplier package designation of PG-SOT23-3-3. It is suitable for low-power switching and amplification in compact electronic designs. The pre-biased configuration makes it ideal for use as a switch in digital circuits, such as microcontroller outputs, where space and component count are critical.
| Qty | Low | High |
|---|---|---|
| 36,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 50V.
It is available in a surface-mount SOT-23 package (TO-236-3, SC-59, SOT-23-3) with supplier package PG-SOT23-3-3.
It is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.
The maximum collector current (IC) is 100mA.
The minimum DC current gain is 120 at Ic=5mA, Vce=5V.
The transition frequency (fT) is 200MHz.
The integrated base resistor is 4.7kΩ.