| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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45,384 pcs
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45384 pcs | On Request | 1 | On Request | On Request | 0026+ | On Request | On Request |
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The BCR135WE6327 is an NPN pre-biased digital transistor manufactured by Infineon Technologies. It integrates a 47 kΩ base resistor, simplifying circuit design by reducing external component count. The transistor is rated for a collector-emitter breakdown voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation of 250 mW.
Electrical characteristics include a DC current gain (hFE) of 70 minimum at 5 mA collector current and 5 V collector-emitter voltage, and a saturation voltage of 300 mV maximum at 500 µA base current and 10 mA collector current. The transition frequency is 150 MHz, suitable for switching and amplification applications up to moderate frequencies.
The device is housed in a surface-mount SC-70 (SOT-323) package with supplier device package PG-SOT323-3-1. It is designed for automated assembly and is RoHS3 compliant (unverified). The pre-biased configuration makes it ideal for use as a switch or driver in low-power circuits where space and component count are critical.
SC-70, SOT-323 (PG-SOT323-3-1).
It is listed as RoHS3 compliant, but this is unverified.
50 V.
100 mA.
250 mW.
Minimum 70 at 5mA collector current and 5V Vce.
47 kΩ.