BCR135WE6327 NPN pre-biased digital transistor from Infineon Technologies. Features 50V collector-emitter breakdown voltage, 100mA collector current, and 250mW power dissipation in a surface-mount SC-70/SOT-323 package.
Mfr Part #:

BCR135WE6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
NPN pre-biased digital transistor from Infineon Technologies. Features 50V collector-emitter breakdown voltage, 100mA collector current, and 250mW power dissipation in a surface-mount SC-70/SOT-323 package.
✓ Total Stock: 45,384 pcs

BCR135WE6327 Available from 1 distributor

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45,384 pcs
45384 pcs On Request 1 On Request On Request 0026+ On Request On Request

BCR135WE6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCR135WE6327 Description

Short technical summary and product information.

The BCR135WE6327 is an NPN pre-biased digital transistor manufactured by Infineon Technologies. It integrates a 47 kΩ base resistor, simplifying circuit design by reducing external component count. The transistor is rated for a collector-emitter breakdown voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation of 250 mW.

 

Electrical characteristics include a DC current gain (hFE) of 70 minimum at 5 mA collector current and 5 V collector-emitter voltage, and a saturation voltage of 300 mV maximum at 500 µA base current and 10 mA collector current. The transition frequency is 150 MHz, suitable for switching and amplification applications up to moderate frequencies.

 

The device is housed in a surface-mount SC-70 (SOT-323) package with supplier device package PG-SOT323-3-1. It is designed for automated assembly and is RoHS3 compliant (unverified). The pre-biased configuration makes it ideal for use as a switch or driver in low-power circuits where space and component count are critical.

BCR135WE6327 Quick Information

Product Type: Pre-Biased Bipolar Transistor
Canonical Name: NPN Pre-Biased Digital Transistor
Subcategory: Single Pre-Biased BJT

BCR135WE6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCR135WE6327 Features

  • NPN pre-biased digital transistor with internal resistor.
  • Rated for 50V collector-emitter breakdown voltage.
  • Supports 100mA continuous collector current.
  • 250mW power dissipation in compact SC-70 package.
  • 150 MHz transition frequency for switching applications.

BCR135WE6327 Applications

  • Used as a switch in low-power DC circuits.
  • Ideal for driver stages in microcontroller outputs.
  • Suitable for signal amplification up to 150 MHz.
  • Reduces component count in space-constrained designs.

BCR135WE6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of BCR135WE6327?

SC-70, SOT-323 (PG-SOT323-3-1).

Is BCR135WE6327 RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified.

What is the collector-emitter breakdown voltage?

50 V.

What is the maximum collector current?

100 mA.

What is the power dissipation?

250 mW.

What is the DC current gain (hFE)?

Minimum 70 at 5mA collector current and 5V Vce.

What is the internal base resistor value?

47 kΩ.

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