BCR135E6327HTSA1 NPN pre-biased digital transistor from Infineon Technologies. Rated for 50V collector-emitter voltage, 100mA collector current, and 200mW power dissipation in a SOT-23-3 surface-mount package.
Mfr Part #:

BCR135E6327HTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
NPN pre-biased digital transistor from Infineon Technologies. Rated for 50V collector-emitter voltage, 100mA collector current, and 200mW power dissipation in a SOT-23-3 surface-mount package.
✓ Total Stock: 300 pcs
$ Price Range: $0.21 - $0.34

BCR135E6327HTSA1 Available from 1 distributor

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✓ Non-Authorised
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BCR135E6327HTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCR135E6327HTSA1 Description

Short technical summary and product information.

The BCR135E6327HTSA1 is an NPN silicon digital transistor from Infineon Technologies, part of the BCR135 series. It integrates bias resistors (R1=10kΩ, R2=47kΩ) to simplify circuit design by reducing component count.

 

Key electrical characteristics include a maximum collector-emitter voltage of 50V, maximum collector current of 100mA, and total power dissipation of 200mW at soldering point temperature ≤102°C. DC current gain is minimum 70 at 5mA collector current and 5V VCE. The device features a transition frequency of 150MHz typical.

 

The transistor is housed in a standard SOT-23-3 (TO-236-3, SC-59) surface-mount package, suitable for automated assembly. It is AEC-Q101 qualified for automotive applications and has a Pb-free (RoHS compliant) package.

 

Typical applications include switching circuits, inverters, interface circuits, and driver circuits where a pre-biased transistor simplifies layout and reduces component count.

BCR135E6327HTSA1 Quick Information

Product Type: NPN Pre-Biased Digital Transistor
Series: BCR135
Canonical Name: Infineon Technologies BCR135E6327HTSA1 NPN Silicon Digital Transistor
Subcategory: Pre-Biased NPN

BCR135E6327HTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BCR135E6327HTSA1 Estimated Pricing

Qty Low High
1+ $0.34 $0.34
10+ $0.21 $0.21
3,000+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCR135E6327HTSA1 Features

  • NPN pre-biased digital transistor with integrated resistors.
  • Rated for 50V collector-emitter voltage and 100mA current.
  • 200mW power dissipation in SOT-23-3 surface-mount package.
  • AEC-Q101 qualified for automotive applications.
  • Transition frequency of 150 MHz typical.

BCR135E6327HTSA1 Applications

  • Used in switching circuits and inverters.
  • Ideal for interface circuit and driver applications.
  • Suitable for automotive electronic control modules.

BCR135E6327HTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BCR135E6327HTSA1?

50 V.

What is the maximum collector current (IC) rating?

100 mA.

What is the power dissipation of the BCR135E6327HTSA1?

200 mW at TS ≤ 102°C.

What package type is the BCR135E6327HTSA1 available in?

SOT-23-3 (TO-236-3, SC-59) surface-mount package.

Is the BCR135E6327HTSA1 RoHS compliant?

Yes, the device has a Pb-free (RoHS compliant) package as verified by the datasheet.

Is the BCR135E6327HTSA1 qualified for automotive applications?

Yes, it is AEC-Q101 qualified.

What are the integrated resistor values in the BCR135E6327HTSA1?

R1 = 10 kΩ (typical) and R2 = 47 kΩ.

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