| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Storage Temperature |
The Infineon BCR135 is a versatile NPN Silicon Digital Transistor suitable for various applications including switching circuits, inverters, and interface circuit drivers. It comes with built-in bias resistors, specified as R1=10 kΩ and R2=47 kΩ, simplifying circuit design.
This transistor offers a Collector-Emitter Voltage (VCEO) of 50V and a maximum Collector Current (IC) of 100mA. Key electrical characteristics include a DC current gain (hFE) of 70 minimum at 5mA, a Collector-Emitter Saturation Voltage (VCEsat) of 0.3V maximum at 10mA, and a transition frequency (fT) of 150MHz typical at 10mA.
The BCR135 is available in compact surface-mount packages: SOT23, SOT363, and SOT323. It is qualified according to AEC Q101 and comes in a Pb-free, RoHS-compliant package, making it suitable for automotive and industrial applications requiring reliable digital transistor performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the BCR135 is 50V.
The maximum Collector Current (IC) for the BCR135 is 100mA.
The BCR135 has built-in bias resistors with R1 = 10 kΩ and R2 = 47 kΩ.
The typical transition frequency (fT) of the BCR135 is 150MHz.
The BCR135 is available in SOT23, SOT363, and SOT323 packages.
The BCR135 is RoHS3 Compliant and Pb-free.