| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,480 pcs
|
1480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
| SVHC Present | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The BCR119S is a dual NPN pre-biased transistor from Infineon Technologies, designed for small signal switching and amplification applications. It integrates two transistors with built-in 4.7kΩ base resistors, reducing external component count.
Electrical characteristics include a collector current rating of 100mA, collector-emitter voltage of 50V, and a minimum DC current gain (hFE) of 120 at 5mA/5V. The maximum Vce saturation is 300mV at 500µA base current and 10mA collector current. Transition frequency is 150MHz, suitable for moderate-speed circuits.
The device is housed in a surface-mount SOT-363 package (also known as 6-VSSOP or SC-88) with a PG-SOT363-6-1 supplier package. Power dissipation is 250mW. Compliance data indicates RoHS3 compliant, REACH unaffected, and MSL 1 (unverified).
50V.
6-VSSOP, SC-88, SOT-363 (PG-SOT363-6-1).
Yes, RoHS3 compliant (unverified).
100mA.
Minimum 120 at Ic=5mA, Vce=5V.
4.7kΩ.
150MHz.