BCR116SE6327 Dual NPN pre-biased transistor from Infineon, rated for 50V collector-emitter breakdown and 100mA collector current, in a surface-mount SOT-363 package.
Mfr Part #:

BCR116SE6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual NPN pre-biased transistor from Infineon, rated for 50V collector-emitter breakdown and 100mA collector current, in a surface-mount SOT-363 package.
✓ Total Stock: 2,180 pcs

BCR116SE6327 Available from 1 distributor

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BCR116SE6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Power
Resistor
SVHC Present
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCR116SE6327 Description

Short technical summary and product information.

The BCR116SE6327 is a dual NPN pre-biased (bias resistor built-in) small signal bipolar transistor from Infineon Technologies. It integrates two independent NPN transistors with internal base resistors (R1 = 47 kΩ) in a single surface-mount package, simplifying PCB layout and reducing component count.

 

Key electrical ratings include a maximum collector-emitter breakdown voltage of 50 V, a maximum collector current of 100 mA, and a power dissipation of 250 mW. The transistor offers a minimum DC current gain (hFE) of 70 at Ic = 5 mA and Vce = 5 V, and a transition frequency (ft) of 150 MHz, making it suitable for switching and amplification applications up to moderate frequencies.

 

The device is housed in a 6-VSSOP / SC-88 / SOT-363 package (supplier package PG-SOT363-6-1) and is designed for surface-mount assembly. It is RoHS3 compliant and has an MSL rating of 1 (unlimited).

BCR116SE6327 Quick Information

Product Type: Pre-Biased Bipolar Transistor Array
Canonical Name: Infineon BCR116SE6327 Dual NPN Pre-Biased Transistor
Subcategory: Dual NPN

BCR116SE6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCR116SE6327 Features

  • Dual NPN pre-biased transistor array.
  • 50V collector-emitter breakdown voltage.
  • 100mA maximum collector current.
  • 250mW power dissipation capability.
  • Surface-mount SOT-363 package.

BCR116SE6327 Applications

  • Used in low-power switching circuits.
  • Ideal for signal amplification stages.
  • Suitable for driver and interface circuits.
  • Common in portable electronic devices.

BCR116SE6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of BCR116SE6327?

50 V.

What is the maximum collector current?

100 mA.

What is the package type?

6-VSSOP, SC-88, SOT-363 (PG-SOT363-6-1).

Is the BCR116SE6327 RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the transition frequency?

150 MHz.

What is the DC current gain (hFE)?

Minimum 70 at Ic = 5 mA, Vce = 5 V.

What is the base resistor value?

47 kΩ.

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