BCR116E6433HTMA1 NPN pre-biased digital transistor from Infineon Technologies with built-in bias resistors. Rated for 50V collector-emitter voltage, 100mA collector current, and 200mW power dissipation in a SOT-23 surface-mount package.
Mfr Part #:

BCR116E6433HTMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
NPN pre-biased digital transistor from Infineon Technologies with built-in bias resistors. Rated for 50V collector-emitter voltage, 100mA collector current, and 200mW power dissipation in a SOT-23 surface-mount package.
✓ Total Stock: 40 pcs
$ Price Range: $0.06

BCR116E6433HTMA1 Available from 1 distributor

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✓ Non-Authorised
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BCR116E6433HTMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BCR116E6433HTMA1 Description

Short technical summary and product information.

The BCR116E6433HTMA1 is an NPN silicon digital transistor from Infineon Technologies, featuring built-in bias resistors (R1=4.7 kΩ and R2=47 kΩ). This pre-biased configuration simplifies circuit design by reducing external component count.

 

It is rated for a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 200 mW. The DC current gain (hFE) is at least 70 at 5 mA collector current and 5 V collector-emitter voltage, while the collector-emitter saturation voltage is a maximum of 300 mV at 10 mA collector current and 0.5 mA base current. The transition frequency is 150 MHz.

 

This transistor is suitable for switching circuits, inverters, interface circuits, and driver circuits. The built-in resistors enable direct connection to logic outputs without additional biasing components. The device is qualified according to AEC Q101 for automotive applications.

 

The device is offered in a SOT-23 surface-mount package (TO-236-3, SC-59) with a supplier device package of PG-SOT23. It is RoHS compliant and lead-free.

BCR116E6433HTMA1 Quick Information

Product Type: Pre-Biased Bipolar Transistor
Series: BCR116
Canonical Name: NPN Pre-Biased Digital Transistor
Subcategory: Single, Pre-Biased

BCR116E6433HTMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

BCR116E6433HTMA1 Estimated Pricing

Qty Low High
40,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCR116E6433HTMA1 Features

  • NPN pre-biased transistor with built-in resistors.
  • Rated for 50V collector-emitter voltage.
  • Supports 100mA collector current.
  • 200mW power dissipation in SOT-23.
  • RoHS compliant and lead-free.

BCR116E6433HTMA1 Applications

  • Suitable for switching circuit applications.
  • Used in inverter and driver circuits.
  • Ideal for interface circuit designs.
  • Qualified for automotive applications.

BCR116E6433HTMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

The collector-emitter breakdown voltage (Vceo) is 50 V.

What package is this transistor available in?

The transistor is available in a SOT-23 surface-mount package (TO-236-3, SC-59).

What is the maximum junction temperature?

The maximum junction temperature is 150 °C.

Is this product RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the DC current gain (hFE)?

The minimum DC current gain is 70 at Ic=5 mA and Vce=5 V.

What are the built-in resistor values?

The built-in resistors are R1=4.7 kΩ and R2=47 kΩ.

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