BCR116 The Infineon BCR116 is an NPN Silicon Digital Transistor designed for switching, inverter, interface, and driver circuits. It features built-in bias resistors and operates up to 50V.
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BCR116

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon BCR116 is an NPN Silicon Digital Transistor designed for switching, inverter, interface, and driver circuits. It features built-in bias resistors and operates up to 50V.
✓ Total Stock: 3,238 pcs
$ Price Range: $0.19

BCR116 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,238 pcs
3238 pcs On Request 1 On Request On Request On Request On Request On Request

BCR116 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BCR116 Description

Short technical summary and product information.

The Infineon BCR116 is an NPN Silicon Digital Transistor suitable for various electronic applications including switching circuits, inverters, interface circuits, and driver circuits. This transistor is built with integrated bias resistors, specifically R1 = 4.7 kΩ and R2 = 47 kΩ, simplifying circuit design.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of up to 100mA. The DC current gain (hFE) is a minimum of 70 at 5mA collector current and 5V VCE. The collector-emitter saturation voltage (VCEsat) is a maximum of 0.3V at 10mA IC and 0.5mA IB. The input voltage ranges for off and on states are 0.4-0.8V and 0.5-1.4V respectively.

 

With a transition frequency (fT) of 150MHz at 10mA IC and 5V VCE, and a collector-base capacitance (Ccb) of 3pF maximum at 10V VCB and 1MHz, the BCR116 is capable of high-frequency operation. The device is housed in a SOT363 surface-mount package, facilitating integration into compact electronic designs. It operates within a junction temperature range of -65°C to 150°C and has a maximum power dissipation of 250mW at a soldering point temperature of 115°C.

BCR116 Quick Information

Product Type: NPN Silicon Digital Transistor
Series: BCR
Canonical Name: BCR116 NPN Silicon Digital Transistor
Subcategory: Pre-Biased Transistor

BCR116 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCR116 Estimated Pricing

Qty Low High
1+ $0.19 $0.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCR116 Features

  • NPN Silicon Digital Transistor
  • Built-in bias resistors (R1=4.7kΩ, R2=47kΩ)
  • 50V Collector-Emitter Voltage (VCEO)
  • 100mA Collector Current (IC)
  • SOT363 Surface Mount Package

BCR116 Applications

  • Used in switching circuits
  • Suitable for inverter circuits
  • Interface circuit applications
  • Driver circuit applications

BCR116 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the BCR116?

The collector-emitter voltage (VCEO) for the BCR116 is 50V.

What is the maximum collector current of the BCR116?

The maximum collector current (IC) for the BCR116 is 100mA.

What is the package type for the BCR116?

The BCR116 is available in a SOT363 package.

What are the built-in bias resistors in the BCR116?

The BCR116 has built-in bias resistors with R1 = 4.7 kΩ and R2 = 47 kΩ.

What is the DC current gain (hFE) of the BCR116?

The DC current gain (hFE) of the BCR116 is a minimum of 70 at IC = 5 mA and VCE = 5 V.

What is the collector-emitter saturation voltage (VCEsat) for the BCR116?

The collector-emitter saturation voltage (VCEsat) for the BCR116 is a maximum of 0.3V at IC = 10 mA and IB = 0.5 mA.

What is the transition frequency (fT) of the BCR116?

The transition frequency (fT) of the BCR116 is typically 150MHz at IC = 10 mA and VCE = 5 V.

BCR116 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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The Philips BC847B is an NPN general purpose transistor in a SOT-23 package. It offers a low current capability of up to 100 mA and a low voltage rating of 45 V.
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PDTC143XU
PDTC143XU
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The Nexperia PDTC143XU is an NPN Resistor-Equipped Transistor (RET) in a SOT323 package. It features a 50V collector-emitter voltage and 100mA output current capability.
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