| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Tape & Reel | |
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The BCR108WE6327 is a NPN pre-biased digital transistor manufactured by Infineon Technologies. It integrates a bias resistor network, simplifying circuit design by reducing external component count.
Key electrical specifications include a power dissipation of 250 mW, collector-emitter voltage (Vceo) of 50 V, and collector current (Ic) of 100 mA. The DC current gain (hFE) is minimum 70 at 5 mA, 5 V. The transition frequency (fT) is 170 MHz.
The transistor is housed in a surface-mount SC-70 (SOT-323) package with supplier device package PG-SOT323-3-1. It is suitable for switching and amplification applications in compact electronic designs.
The collector-emitter voltage (Vceo) is 50 V.
It is available in SC-70 (SOT-323) surface mount package.
It is listed as RoHS3 Compliant, but this status is unverified.
The power dissipation is 250 mW.
The minimum hFE is 70 at Ic=5mA, Vce=5V.
The maximum collector current (Ic) is 100 mA.
The transition frequency (fT) is 170 MHz.