| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BCR108W is an NPN Silicon Digital Transistor suitable for various switching and interface circuit applications. It integrates bias resistors (R1=2.2 kΩ, R2=47 kΩ) for simplified circuit design.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 100mA. The DC current gain (hFE) is a minimum of 70 at 5mA. The collector-emitter saturation voltage (VCEsat) is a maximum of 0.3V under specific test conditions. The transition frequency (fT) reaches 170MHz at 10mA and 5V.
This transistor is housed in a compact SOT-323 surface-mount package, making it ideal for space-constrained designs. It operates within a junction temperature range of -65°C to 150°C and has a total power dissipation of up to 250mW at 124°C ambient temperature.
The BCR108W is Pb-free and qualified according to AEC Q101 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
100mA.
250mW at case temperature 124°C.
SOT-323 surface-mount package.
Minimum 70 at IC=5mA, VCE=5V.
170MHz typical.
Typical 2.2kΩ, range 1.5 to 2.9kΩ.