BCR108W The Infineon BCR108W is an NPN Silicon Digital Transistor designed for switching circuits, inverters, and driver applications. It features built-in bias resistors.
Mfr Part #:

BCR108W

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon BCR108W is an NPN Silicon Digital Transistor designed for switching circuits, inverters, and driver applications. It features built-in bias resistors.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.19

BCR108W Available from 1 distributor

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✓ Non-Authorised
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BCR108W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Junction Temperature
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Storage Temperature

BCR108W Description

Short technical summary and product information.

The Infineon BCR108W is an NPN Silicon Digital Transistor suitable for various switching and interface circuit applications. It integrates bias resistors (R1=2.2 kΩ, R2=47 kΩ) for simplified circuit design.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 100mA. The DC current gain (hFE) is a minimum of 70 at 5mA. The collector-emitter saturation voltage (VCEsat) is a maximum of 0.3V under specific test conditions. The transition frequency (fT) reaches 170MHz at 10mA and 5V.

 

This transistor is housed in a compact SOT-323 surface-mount package, making it ideal for space-constrained designs. It operates within a junction temperature range of -65°C to 150°C and has a total power dissipation of up to 250mW at 124°C ambient temperature.

 

The BCR108W is Pb-free and qualified according to AEC Q101 standards.

BCR108W Quick Information

Product Type: NPN Silicon Digital Transistor
Series: BCR108
Canonical Name: BCR108W NPN Silicon Digital Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

BCR108W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BCR108W Estimated Pricing

Qty Low High
1+ $0.19 $0.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCR108W Features

  • NPN Silicon Digital Transistor
  • Built-in bias resistors (R1=2.2 kΩ, R2=47 kΩ)
  • 50V Collector-Emitter Voltage (VCEO)
  • 100mA Collector Current (IC)
  • SOT-323 Surface Mount Package

BCR108W Applications

  • Ideal for switching circuits
  • Used in inverter circuits
  • Suitable for interface circuits
  • Applicable for driver circuits

BCR108W FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of BCR108W?

50V.

What is the maximum collector current?

100mA.

What is the power dissipation of BCR108W?

250mW at case temperature 124°C.

What is the package type?

SOT-323 surface-mount package.

What is the DC current gain?

Minimum 70 at IC=5mA, VCE=5V.

What is the transition frequency?

170MHz typical.

What is the input resistor value?

Typical 2.2kΩ, range 1.5 to 2.9kΩ.

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