Mfr Part #:

BCR108SH6327

Dual NPN pre-biased transistor array with built-in bias resistors. Designed for switching and interface circuits with 50V collector-emitter voltage and 100mA current.

✓ Total Stock: 23,137 pcs

$ Price Range: $0.08 - $0.51

BCR108SH6327 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	14,137 pcs On Request	14137 pcs	On Request	1	On Request	On Request	1351+	On Request	On Request
Rayichip ✓ Non-Authorised Inventory information	9,000 pcs On Request	9000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BCR108SH6327 Description

Short technical summary and product information.

This BCR108SH6327 is a dual NPN pre-biased transistor array manufactured by Infineon Technologies. It integrates two NPN transistors with built-in bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) in a single SOT-363 surface-mount package, providing a compact solution for switching and driver circuits.

Key electrical characteristics include a collector-emitter voltage rating of 50 V, a collector current rating of 100 mA, and a minimum DC current gain of 70 at 5 mA collector current and 5 V collector-emitter voltage. The transistor features a transition frequency of 170 MHz, making it suitable for high-frequency switching applications. The collector-emitter saturation voltage is typically 300 mV at 10 mA collector current and 500 µA base current.

The device is designed for applications such as switching circuits, inverters, interface circuits, and driver circuits. It is qualified to AEC Q101 automotive standard, ensuring reliability in automotive environments. The package is RoHS compliant and lead-free.

The SOT-363 package (also known as 6-VSSOP, SC-88) has a low profile and is suitable for automated assembly. The total power dissipation is 250 mW, and the junction temperature can reach up to 150°C.

BCR108SH6327 Quick Information

Product Type: Dual NPN Pre-Biased Transistor Array

Series: BCR108S

Canonical Name: BCR108SH6327 Dual NPN Pre-Biased Transistor

Subcategory: Arrays, Pre-Biased

BCR108SH6327 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free (RoHS compliant)

BCR108SH6327 Estimated Pricing

Qty	Low	High
1+	$0.51	$0.51
10+	$0.44	$0.44
100+	$0.28	$0.28
500+	$0.18	$0.18
1,000+	$0.15	$0.15
3,000+	$0.08	$0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCR108SH6327 Features

Dual NPN pre-biased transistors in one package.
Built-in bias resistors: R1=2.2kΩ, R2=47kΩ.
Rated for 50V collector-emitter voltage.
100mA continuous collector current.
AEC Q101 qualified for automotive applications.

BCR108SH6327 Applications

Ideal for switching circuits and inverters.
Used in interface and driver circuits.
Suitable for high-frequency applications up to 170MHz.
Designed for automotive control modules.

BCR108SH6327 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter voltage rating?

50 V.

What is the collector current rating?

100 mA.

What is the package type?

SOT-363 (6-VSSOP, SC-88).

Does it have built-in bias resistors?

Yes, with R1 = 2.2 kΩ and R2 = 47 kΩ.

Is it RoHS compliant?

Yes, it is Pb-free (RoHS compliant).

What is the transition frequency?

170 MHz.

Is it suitable for automotive applications?

Yes, it is AEC Q101 qualified.

Category	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Name	Infineon Technologies
AEC Qualified	Yes
Automotive Grade	Yes
Current	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70
Frequency	170 MHz
Junction Temperature	150 °C
Mounting Type	Surface Mount
Power	250 mW
Resistor	47kΩ
Storage Temperature	-65°C ~ 150°C
Supplier Device Package	PG-SOT363-6-1
Tape & Reel	Yes
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage	50V