| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,321 pcs
|
1321 pcs | On Request | 1 | On Request | On Request | 1430+ | On Request | On Request |
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| Tape & Reel | |
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The Infineon BCR 35PN H6327 is a small signal bipolar transistor array integrating one NPN and one PNP pre-biased transistor in a single surface mount package. Pre-biased transistors include built-in bias resistors (R1 = 47 kΩ) to simplify circuit design by reducing external component count.
Electrical characteristics include a collector-emitter breakdown voltage (Vceo) of 50 V, a continuous collector current (Ic) rating of 100 mA, and a power dissipation (Pd) of 250 mW. The device offers a transition frequency (ft) of 150 MHz and a minimum DC current gain (hFE) of 70 at 5 mA collector current and 5 V collector-emitter voltage. Maximum collector-emitter saturation voltage is 300 mV at 10 mA collector current with 500 µA base current.
The transistor array is housed in a PG-SOT363-6 package (also known as 6-VSSOP, SC-88, or SOT-363) and is designed for surface mount assembly. This compact package is suitable for space-constrained applications requiring dual transistor functionality.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.58 | $0.58 |
| 10+ | $0.40 | $0.40 |
| 100+ | $0.25 | $0.25 |
| 500+ | $0.16 | $0.16 |
| 1,000+ | $0.14 | $0.14 |
| 3,000+ | $0.12 | $0.12 |
| 6,000+ | $0.10 | $0.10 |
| 9,000+ | $0.09 | $0.09 |
| 24,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is a dual transistor array containing one NPN and one PNP pre-biased transistor.
The Vceo is 50 V.
The maximum continuous collector current is 100 mA.
The power dissipation is 250 mW.
It is available in a surface mount PG-SOT363-6 package, also known as 6-VSSOP, SC-88, or SOT-363.
The built-in base resistor (R1) is 47 kΩ.
The transition frequency is 150 MHz.