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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCP68TA is an NPN bipolar junction transistor manufactured by Diodes Incorporated. It features a minimum collector-emitter breakdown voltage (Vceo) of 20V and a maximum collector current (Ic) of 1A, making it suitable for general-purpose switching and amplification applications.
This transistor offers a maximum power dissipation of 2W and a minimum DC current gain (hFE) of 63 at 500mA collector current and 1V Vce. The maximum Vce saturation voltage is 500mV at a base current of 100mA and collector current of 1A. It has a transition frequency (ft) of 100MHz.
The device is housed in a surface-mount SOT-223 package (TO-261-4, TO-261AA) and supports an operating junction temperature range of -55°C to 150°C. It is designed for surface-mount assembly on printed circuit boards.
The minimum collector-emitter breakdown voltage (Vceo) is 20V.
The maximum collector current (Ic) is 1A.
The BCP68TA is available in a surface-mount SOT-223 package (TO-261-4, TO-261AA).
The operating junction temperature range is -55°C to 150°C.
The minimum DC current gain (hFE) is 63 at Ic=500mA and Vce=1V.
The transition frequency (ft) is 100MHz.
The maximum power dissipation (Pd) is 2W.