| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,100 pcs
|
2100 pcs | On Request | 1 | On Request | On Request | 1828+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Power Dissipation | |
| Storage Temperature |
The BCP68 is an NPN Silicon Planar Medium Power Transistor designed for applications such as AF drivers and output stages. It offers a high collector current capability and low VCE(sat).
Key electrical characteristics include a collector-emitter voltage (VCEO) of 20V and a continuous collector current (IC) of 1A. The device can handle a peak pulse current of 2A and has a power dissipation of 2W at 25°C ambient temperature. The operating and storage temperature range is from -55°C to +150°C.
The transistor is supplied in a SOT-223 package, suitable for surface mounting. Its complementary type is the BCP69. Note that this part is obsolete and the FZT489 is recommended as a replacement.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) of the BCP68 transistor is 20V.
The continuous collector current (IC) for the BCP68 is 1A.
The power dissipation (Ptot) of the BCP68 at 25°C ambient temperature is 2W.
The operating and storage temperature range for the BCP68 is -55°C to +150°C.
The BCP68 transistor is supplied in a SOT-223 package.
The RoHS status for the BCP68 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BCP68 is 1 Unlimited.