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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,124 pcs
|
1124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCP68 is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. It features a maximum collector-emitter breakdown voltage of 20V and a maximum collector current of 1A, making it suitable for low-power circuits.
With a power dissipation rating of 1.5W and an operating junction temperature range of -55°C to 150°C, the device can handle moderate thermal loads. The minimum DC current gain (hFE) is 85 at 500mA collector current and 1V collector-emitter voltage, and the maximum collector-emitter saturation voltage is 500mV at 100mA base current and 1A collector current.
The transistor is housed in a TO-261-4 (SOT-223-4) surface-mount package, which is suitable for automated assembly. The mounting type is surface mount, and the supplier device package is SOT-223-4.
The maximum collector-emitter breakdown voltage is 20V.
The maximum collector current is 1A.
The operating junction temperature range is -55°C to 150°C.
The BCP68 is available in a TO-261-4 (SOT-223-4) surface-mount package.
The BCP68 is listed as RoHS3 compliant, though this is unverified.
The minimum DC current gain (hFE) is 85 at a collector current of 500mA and collector-emitter voltage of 1V.
The maximum collector-emitter saturation voltage is 500mV at a base current of 100mA and collector current of 1A.