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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
286,020 pcs
|
286020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
25,000 pcs
|
25000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
5,733 pcs
|
5733 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,531 pcs
|
1531 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
659 pcs
|
659 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
103 pcs
|
103 pcs | On Request | 1 | On Request | On Request | 0838 | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current - Peak | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | |
| Frequency | |
| Halogen Free | |
| Lead Free (Pb-Free) | |
| MSL (Moisture Sensitivity Level) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape & Reel Options | |
| Tape and Reel Options | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCP56T1G is an NPN silicon epitaxial bipolar junction transistor from onsemi, part of the BCP56 series. It is designed for use in audio amplifier and general-purpose medium power switching applications. The device is housed in the SOT-223 (TO-261) surface-mount package, which is optimized for medium power dissipation with formed leads that absorb thermal stress during soldering.
Key electrical specifications include a minimum collector-emitter breakdown voltage (V(BR)CEO) of 80V, a minimum collector-base breakdown voltage of 100V, and a maximum continuous collector current of 1A (2A peak). The DC current gain (hFE) is a minimum of 40 at 150mA and 2V Vce, and the transition frequency (ft) is typically 130MHz. The maximum collector-emitter saturation voltage is 500mV at 500mA collector current.
The device is rated for a maximum power dissipation of 1.5W when mounted on an FR-4 board at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 83.3°C/W. It operates over a junction temperature range of -65°C to 150°C. The BCP56T1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.68 | $0.68 |
| 10+ | $0.42 | $0.42 |
| 100+ | $0.27 | $0.27 |
| 500+ | $0.21 | $0.21 |
| 1,000+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) is 80V at Ic=1mA, Ib=0.
The maximum continuous collector current (Ic) is 1A DC, with a peak current of 2A.
The BCP56T1G is housed in a surface-mount SOT-223 (TO-261) package.
The operating junction temperature range is -65°C to 150°C.
Yes, the BCP56T1G is RoHS Compliant, Pb-Free, and Halogen Free/BFR Free as stated in the datasheet.
The typical transition frequency (ft) is 130 MHz.
The PNP complement is the BCP53T1G.