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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
52,020 pcs
|
52020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Turn-On Voltage | |
| Collector-Base Breakdown Voltage | |
| Current | |
| DC Current Gain (Minimum/Maximum @ IC = 150 mA; VCE = 2 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Peak Pulse Current | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Transition Frequency | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCP5616TA is an NPN silicon planar medium power transistor manufactured by Diodes Incorporated. It is designed for use in AF driver and output stages, offering a high collector current capability and low collector-emitter saturation voltage.
Key electrical specifications include a collector-emitter breakdown voltage of 80V, a collector-base breakdown voltage of 100V, and a continuous collector current rating of 1A. The device provides a DC current gain (hFE) range of 100 to 250 at 150mA, 2V, and a typical transition frequency of 125MHz.
The transistor is housed in a surface mount SOT-223-3 package (TO-261-4, TO-261AA), with a power dissipation of 2W. It operates over a junction temperature range of -55°C to +150°C, making it suitable for a variety of general-purpose switching and amplification applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
| 10+ | $0.21 | $0.21 |
| 100+ | $0.18 | $0.18 |
| 500+ | $0.16 | $0.16 |
| 1,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 80V.
The continuous collector current (IC) is 1A.
The BCP5616TA is available in a surface mount SOT-223-3 package (TO-261-4, TO-261AA).
The operating junction temperature range is -55°C to +150°C.
The DC current gain (hFE) is 100 to 250 at Ic=150mA, Vce=2V.
The typical transition frequency (fT) is 125MHz at Ic=50mA, Vce=10V, f=100MHz.
The power dissipation (Ptot) is 2W at 25°C ambient temperature.