| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BCP56-16T3 is an NPN bipolar junction transistor (BJT) manufactured by On Semiconductor. This component is designed for general-purpose switching and amplification applications.
Key electrical characteristics include a maximum collector-emitter voltage of 80V and a maximum collector current of 1A. It features a typical DC current gain (hFE) of 100 at 150mA and 2V, and a transition frequency (fT) of 100MHz, indicating its suitability for moderate-frequency operations.
The transistor has a low collector cutoff current of 100nA and a typical collector-emitter saturation voltage of 500mV at 50mA/500mA, contributing to efficient switching performance. It operates within a temperature range of -55°C to 175°C.
Packaged in a surface-mount SOT-223 (TO-261-4, TO-261AA) case, the BCP56-16T3 is suitable for automated assembly processes. It is supplied on tape and reel for high-volume manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 80V.
The maximum continuous collector current is 1A.
The transition frequency is 100MHz.
The operating temperature range is -55°C to 175°C.
The BCP56-16T3 is supplied in a SOT-223 surface mount package.
Yes, the BCP56-16T3 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.