| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The BCP55,115 from NXP Semiconductors is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching circuits. This silicon epitaxial planar transistor offers a collector-emitter voltage (Vceo) of 60V and a continuous collector current (Ic) of 1A.
With a transition frequency (Ft) of 180MHz and a power dissipation of 1.35W, the BCP55,115 is suitable for various electronic applications. It is housed in a compact SOT-223 surface mount package, making it ideal for space-constrained designs.
This transistor is commonly employed in linear amplifiers, switching circuits, and driver stages within industrial and consumer electronic products. Its robust specifications allow for reliable performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 60V.
The continuous collector current (Ic) is 1A.
The typical transition frequency (Ft) is 180MHz.
It comes in a SOT-223 surface mount package.
The maximum power dissipation is 1.35W.