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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
710 pcs
|
710 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCP54H6327XTSA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies. It is designed for general-purpose switching and amplification applications. Key electrical specifications include a collector-emitter voltage (Vceo) of 45V, a collector current of 1A, and a power dissipation of 2W. The transistor offers a DC current gain (hFE) of minimum 40 at 150mA collector current and 2V Vce, and a saturation voltage of 500mV maximum at 500mA collector current. The transition frequency is 100 MHz, making it suitable for moderate frequency applications. The device is housed in a surface-mount TO-261-4 (SOT223-4) package, specifically the PG-SOT223-4-10 supplier package. It is rated for operation up to 150°C junction temperature.
| Qty | Low | High |
|---|---|---|
| 7,000+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 45V.
The device is available in a TO-261-4 (SOT223-4) surface-mount package, specifically the PG-SOT223-4-10 supplier package.
The junction temperature is rated up to 150°C.
The device is marked as RoHS3 compliant, but this status is unverified.
The minimum DC current gain (hFE) is 40 at Ic=150mA and Vce=2V.
The transition frequency (ft) is 100 MHz.