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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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896 pcs
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896 pcs | On Request | 1 | On Request | On Request | 1716+ | On Request | On Request |
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| Tape & Reel | |
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The BCP54-16E6327 is an NPN bipolar junction transistor manufactured by Infineon Technologies. It is designed for general-purpose switching and amplification applications. Key electrical specifications include a collector-emitter voltage (VCEO) of 45V, a collector current (IC) of 1A, and a power dissipation of 2W. The transistor offers a DC current gain (hFE) of minimum 100 at 150mA and 2V, and a collector-emitter saturation voltage of 500mV maximum at 50mA base current and 500mA collector current. The transition frequency (fT) is 100MHz, making it suitable for moderate-frequency applications. The device is surface-mount packaged in a TO-261-4 / TO-261AA case, with the supplier device package being SOT-223. It operates at a maximum junction temperature of 150°C. The BCP54-16E6327 is RoHS3 compliant and REACH unaffected, with an MSL of 1 (unlimited). This transistor is commonly used in power management, driver circuits, and switching applications where moderate voltage and current handling are required.
The collector-emitter voltage (VCEO) is 45V.
It is available in a surface-mount SOT-223 package (TO-261-4 / TO-261AA case).
The maximum junction temperature is 150°C.
Yes, it is RoHS3 compliant.
The minimum DC current gain (hFE) is 100 at 150mA collector current and 2V VCE.
The transition frequency (fT) is 100MHz.