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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor BCP53T1 is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It features a maximum DC collector current of 1.5A and a collector-emitter voltage (VCEO) of up to -80V, with a collector-base voltage (VCBO) of -100V.
This transistor operates within a wide temperature range, from -65°C to +150°C, making it suitable for demanding environments. The device has a typical gain bandwidth product (fT) of 50 MHz and a minimum DC collector/base gain (Hfe) of 25.
Packaged in a SOT-223-4 surface-mount case, the BCP53T1 has dimensions of 6.5mm in length, 3.5mm in width, and 1.57mm in height. It is supplied in cut tape packaging with a factory pack quantity of 1000 units.
Key electrical characteristics include a collector-emitter saturation voltage of -0.5V and a power dissipation (Pd) of 1.5W. The BCP53T1 is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -80 V.
The maximum DC collector current is 1.5 A.
The BCP53T1 comes in an SOT-223-4 surface-mount package.
The operating temperature range is -65 °C to +150 °C.
The maximum power dissipation is 1.5 W.
The gain bandwidth product (fT) is typically 50 MHz.
The maximum collector-base voltage (VCBO) is -100 V.