BCP53QTA BCP53QTA is a PNP medium power transistor from Diodes Incorporated. It features 80V collector-emitter breakdown voltage, 1A continuous collector current, and 2W power dissipation in a surface-mount SOT223 package.
Mfr Part #:

BCP53QTA

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
BCP53QTA is a PNP medium power transistor from Diodes Incorporated. It features 80V collector-emitter breakdown voltage, 1A continuous collector current, and 2W power dissipation in a surface-mount SOT223 package.
Total Stock: 11,000 pcs
$ Price Range: $0.14 - $0.87

BCP53QTA Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
11,000 pcs
11000 pcs On Request 1 On Request On Request 14+ On Request On Request

BCP53QTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Case Material
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Terminal Finish
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

BCP53QTA Description

Short technical summary and product information.

The BCP53QTA is a PNP medium power bipolar junction transistor manufactured by Diodes Incorporated. It is designed for medium power switching and amplification applications, offering a collector-emitter breakdown voltage (BVCEO) of -80V minimum and a continuous collector current (IC) of -1A. The device can handle peak pulse currents up to -2A.

 

Key electrical characteristics include a DC current gain (hFE) of 40 minimum at 150mA and 2V, a low saturation voltage (VCE(sat)) of -500mV maximum at 50mA base current and 500mA collector current, and a transition frequency (fT) of 150MHz. Power dissipation is rated at 2W.

 

The transistor is housed in a surface-mount SOT223 package (TO-261-4, TO-261AA) with molded plastic case material rated UL 94V-0. Terminals have matte tin plating for solderability. The device is fully RoHS compliant, lead-free, and halogen and antimony free. It is qualified to AEC-Q101 standards for automotive applications.

BCP53QTA Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BCP53QTA PNP Medium Power Transistor
Subcategory: PNP Medium Power

BCP53QTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

BCP53QTA Estimated Pricing

Qty Low High
1+ $0.87 $0.87
10+ $0.60 $0.60
100+ $0.38 $0.38
500+ $0.24 $0.24
1,000+ $0.14 $0.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

BCP53QTA Features

  • PNP medium power bipolar transistor.
  • 80V collector-emitter breakdown voltage.
  • 1A continuous collector current rating.
  • 2W power dissipation capability.
  • Surface-mount SOT223 package.

BCP53QTA Applications

  • Medium power switching circuits.
  • Audio frequency driver stages.
  • Output stage amplification.
  • Automotive electronic modules.

BCP53QTA FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type of the BCP53QTA?

The BCP53QTA is housed in a surface-mount SOT223 package (TO-261-4, TO-261AA).

What is the operating temperature range?

The operating temperature range is -65°C to 150°C (junction).

Is the BCP53QTA RoHS compliant?

Yes, the BCP53QTA is RoHS3 compliant and fully lead-free.

What is the collector-emitter breakdown voltage?

The minimum collector-emitter breakdown voltage (BVCEO) is -80V.

What is the maximum collector current?

The continuous collector current (IC) is -1A, with a peak pulse current (ICM) of -2A.

What is the power dissipation rating?

The power dissipation (PD) is 2W.

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