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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| Automotive Grade | |
| Base Current (IB) | |
| Base-Emitter Voltage (VBE(on)) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (Minimum @ IC=5 mA, VCE=2 V) | |
| DC Current Gain (Minimum @ IC=500 mA, VCE=2 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Peak Base Current (IBM) | |
| Peak Collector Current (ICM) | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance (Junction to Soldering Point) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BCP5316H6327XTSA1 is a PNP silicon AF transistor from Infineon Technologies designed for audio frequency driver and output stages. It features a maximum collector-emitter voltage of 80V and a continuous collector current rating of 1A, with a peak current capability of 1.5A.
Key electrical characteristics include a DC current gain (hFE) of 100 to 250 at 150mA collector current, a low collector-emitter saturation voltage of 0.5V maximum, and a typical transition frequency of 125 MHz. The device is qualified according to AEC Q101, making it suitable for automotive applications.
The transistor is supplied in a surface-mount SOT223 (TO-261AA) package with a supplier device package designation of PG-SOT223-4-24. It is RoHS compliant and Pb-free. Maximum power dissipation is 2W at a soldering point temperature of 120°C, with a junction-to-soldering point thermal resistance of 15 K/W.
| Qty | Low | High |
|---|---|---|
| 7,000+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 80V.
It is available in a surface-mount SOT223 (TO-261AA) package, with supplier device package PG-SOT223-4-24.
The maximum junction temperature is 150°C, and the storage temperature range is -65°C to 150°C.
Yes, it is RoHS compliant and Pb-free as per the datasheet.
At IC=150mA and VCE=2V, the hFE is minimum 100, typical 160, and maximum 250.
The typical transition frequency is 125 MHz at IC=50mA, VCE=10V, f=100MHz.
Complementary NPN types include BCP54, BCP55, and BCP56 from Infineon Technologies.