| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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470 pcs
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470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-05-08 07:15:28 |
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The BCP53 is a PNP silicon epitaxial transistor from On Semiconductor, specifically designed for audio amplifier applications. It offers a high collector current capability of 1.5 Amps and a collector-emitter voltage rating of -80V, making it suitable for medium power amplification and switching circuits.
The device is housed in the SOT-223 surface mount package, which features formed leads that absorb thermal stress during soldering, eliminating the risk of die damage. The package can be soldered using wave or reflow processes. The BCP53 has a maximum power dissipation of 1.5W at 25°C ambient temperature and an operating junction temperature range of -55°C to 150°C.
Key electrical characteristics include a DC current gain (hFE) of 40 minimum at 150mA and 2V, and a collector-emitter saturation voltage of 500mV maximum at 500mA and 50mA base current. The NPN complement is the BCP56. Pb-Free package options are available for environmentally sensitive applications.
The maximum collector-emitter voltage (VCEO) is -80 V.
The maximum collector current (IC) is 1.5 A.
The BCP53 is available in a SOT-223 surface mount package (TO-261-4, TO-261AA).
The operating junction temperature range is -55°C to 150°C.
The BCP53 is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The minimum DC current gain is 40 at Ic=150 mA and Vce=2 V.
The maximum collector-emitter saturation voltage is 500 mV at Ib=50 mA and Ic=500 mA.