| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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518 pcs
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518 pcs | On Request | 1 | On Request | On Request | 15+18+ | On Request | On Request | |
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154 pcs
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154 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BCM856SH6327 is a bipolar junction transistor (BJT) belonging to the Bcm856 series. This component is manufactured by Infineon Technologies and is supplied in a SOT-363 surface-mount package.
Key electrical specifications include a maximum DC collector current of 200 mA and a collector-emitter voltage (VCEO) of 65 V. The transistor also features a collector-base voltage (VCBO) of 80 V and an emitter-base voltage (VEBO) of 5 V. Its collector-emitter saturation voltage is rated at a maximum of 0.25 V. The device has a maximum power dissipation of 250 mW and a typical gain bandwidth product (fT) of 250 MHz.
Thermal characteristics include a minimum operating temperature of -65 °C and a maximum operating temperature of +150 °C. The BCM856SH6327 has a maximum DC current gain (Hfe) of 450 and a continuous collector current of 100 mA. It is supplied on a reel with a standard package quantity of 3000 units.
This transistor is suitable for various electronic applications requiring a reliable BJT component. Its surface-mount SOT-363 package facilitates integration into compact circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC collector current for the BCM856SH6327 is 200 mA.
The maximum collector-emitter voltage (VCEO Max) for the BCM856SH6327 is 65 V.
The maximum power dissipation for the BCM856SH6327 is 250 mW.
The BCM856SH6327 operates within a temperature range of -65 °C to +150 °C.
The BCM856SH6327 is supplied in a SOT-363 package.
The gain bandwidth product (fT) of the BCM856SH6327 is 250 MHz.
The maximum DC current gain (Hfe) for the BCM856SH6327 is 450.