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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC869,115 is a PNP bipolar junction transistor manufactured by NXP Semiconductors. It is designed for general-purpose switching and amplification applications requiring a maximum collector-emitter breakdown voltage of 20V and a continuous collector current rating of 1A. The device offers a DC current gain (hFE) of 85 minimum at 500mA collector current and 1V collector-emitter voltage, with a maximum saturation voltage of 500mV at 100mA base current and 1A collector current. The transition frequency is 140MHz, making it suitable for moderate-speed switching circuits.
This transistor is housed in a surface-mount TO-243AA package, also known as SOT-89, which provides a compact footprint for space-constrained PCB designs. The maximum power dissipation is 1.2W, and the junction operating temperature range extends up to 150°C. The part is RoHS3 compliant and REACH unaffected, though these compliance claims are unverified.
The maximum collector-emitter breakdown voltage (Vce) is 20V.
The maximum continuous collector current (Ic) is 1A.
It is available in a surface-mount TO-243AA package, also known as SOT-89.
The maximum junction operating temperature is 150°C.
The part is listed as RoHS3 compliant, but this status is unverified.