| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,588 pcs
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2588 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
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1,866 pcs
|
1866 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Lead Style | |
| Power Dissipation |
The BC868 is an NPN silicon planar medium power transistor manufactured by NXP Semiconductors. It is designed for general AF applications and Class B audio output stages, capable of handling up to 3W.
Key electrical characteristics include a Collector-Emitter Breakdown Voltage (VCEO) of 20V and a Collector Current (IC) of 1A. The transistor features high hFE and low saturation voltage, with a typical Collector-Emitter Saturation Voltage (VCE(sat)) of 0.5V at 1A collector current and 100mA base current.
The device is housed in a SOT-89 package. It operates within a temperature range of -65°C to +150°C. The part is marked as obsolete, with recommended replacements being BCW66H or BCX6825.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) is 20V.
The BC868 is available in a SOT-89 surface-mount package.
The operating and storage temperature range is -65°C to +150°C.
The maximum continuous collector current is 1A, with a peak pulse current of 2A.
The DC current gain varies from 50 to 375 depending on test conditions; at IC=1A, VCE=1V, the minimum hFE is 160.
The minimum transition frequency (fT) is 60 MHz.
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.5V at IC=1A, IB=100mA.