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440 pcs
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440 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies BC860BWE6327 is a single PNP bipolar junction transistor. It is designed for surface mount applications and comes in a compact SOT-23 package.
Key electrical specifications include a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. The transistor exhibits a transition frequency of 250 MHz and a maximum power dissipation of 330 mW. Its collector-emitter saturation voltage is specified at 650mV at 5mA base current and 100mA collector current.
The operating temperature range for this device is up to 150°C. The component is supplied in bulk packaging.
This transistor is suitable for various electronic circuits requiring a PNP switching or amplification element in a surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 100 mA.
The maximum collector-emitter breakdown voltage is 45 V.
The package is TO-236-3, SC-59, SOT-23-3 (surface mount).
The maximum junction temperature is 150°C.
The typical transition frequency is 250 MHz.