BC858CLT1G BC858CLT1G is a PNP general purpose transistor from On Semiconductor. It features a maximum collector-emitter voltage of -30V and continuous collector current of -100mA.
Mfr Part #:

BC858CLT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC858CLT1G is a PNP general purpose transistor from On Semiconductor. It features a maximum collector-emitter voltage of -30V and continuous collector current of -100mA.
Total Stock: 106,820 pcs
$ Price Range: $0.03 - $0.13

BC858CLT1G Available from 5 distributors

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BC858CLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector Current - Continuous
Collector-Base Voltage
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC858CLT1G Description

Short technical summary and product information.

The BC858CLT1G is a PNP silicon general purpose transistor from On Semiconductor, designed for surface mount applications. It is part of the BC856ALT1G series and is housed in a compact SOT-23-3 (TO-236) package.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -30V, a maximum collector-base voltage (VCBO) of -30V, and a maximum emitter-base voltage (VEBO) of -5V. The device supports a continuous collector current of -100mA and a peak collector current of -200mA. It offers a minimum DC current gain (hFE) of 420 at 2mA and 5V, with a typical transition frequency of 100MHz.

 

Power dissipation is rated at 300mW on an alumina substrate, with an operating junction temperature range of -55°C to +150°C. The transistor is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, making it suitable for environmentally sensitive designs.

BC858CLT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC858CLT1G Series
Canonical Name: BC858CLT1G PNP General Purpose Transistor
Subcategory: Single PNP

BC858CLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC858CLT1G Estimated Pricing

Qty Low High
1+ $0.13 $0.13
10+ $0.08 $0.08
100+ $0.06 $0.06
500+ $0.04 $0.04
1,000+ $0.03 $0.03
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC858CLT1G Features

  • PNP silicon general purpose transistor.
  • Maximum collector-emitter voltage of -30V.
  • Continuous collector current of -100mA.
  • DC current gain of 420 minimum at 2mA.
  • Surface mount SOT-23-3 package.

BC858CLT1G Applications

  • General purpose switching and amplification.
  • Low-power surface mount circuit designs.
  • Signal processing in portable electronics.

BC858CLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC858CLT1G?

The maximum collector-emitter voltage (VCEO) is -30V.

What is the continuous collector current rating?

The maximum continuous collector current is -100mA.

What is the package type for this transistor?

The BC858CLT1G is available in a SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the BC858CLT1G RoHS compliant?

Yes, the datasheet states the device is RoHS compliant, Pb-Free, and Halogen Free/BFR Free.

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