BC858CE6327HTSA1 PNP silicon AF transistor with 30V collector-emitter voltage and 100mA collector current. Surface-mount SOT-23 package, AEC Q101 qualified.
Mfr Part #:

BC858CE6327HTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
PNP silicon AF transistor with 30V collector-emitter voltage and 100mA collector current. Surface-mount SOT-23 package, AEC Q101 qualified.
Total Stock: 42,000 pcs
$ Price Range: $0.06 - $0.44

BC858CE6327HTSA1 Available from 1 distributor

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BC858CE6327HTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector-Base Voltage (VCBO)
Current
DC Current Gain (Minimum/Typical/Maximum @ Ic=2 mA, Vce=5 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Peak Collector Current
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC858CE6327HTSA1 Description

Short technical summary and product information.

The BC858CE6327HTSA1 is a PNP silicon audio-frequency transistor from Infineon Technologies, part of the BC858C family. It features a maximum collector-emitter voltage of 30V, collector-base voltage of 30V, and emitter-base voltage of 5V. The device supports a continuous collector current of 100mA with a peak of 200mA, and offers a DC current gain (hFE) ranging from 420 to 800 at 2mA and 5V, with a typical value of 520.

 

This transistor is designed for AF input stages and driver applications, providing high current gain, low collector-emitter saturation voltage (650mV max at 100mA), and low noise between 30Hz and 15kHz. It has a transition frequency of 250MHz and a maximum power dissipation of 330mW at 71°C case temperature. The junction temperature rating is 150°C, with storage temperature range of -65°C to 150°C.

 

The BC858CE6327HTSA1 comes in a surface-mount SOT-23 package (TO-236-3, SC-59, SOT-23-3) with supplier device package PG-SOT23. It is Pb-free and RoHS compliant, and qualified according to AEC Q101 for automotive applications. The complementary NPN types are BC846...-BC850... series.

BC858CE6327HTSA1 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC858C
Canonical Name: PNP Silicon AF Transistor
Subcategory: Single PNP Transistor

BC858CE6327HTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC858CE6327HTSA1 Estimated Pricing

Qty Low High
1+ $0.44 $0.44
10+ $0.30 $0.30
100+ $0.19 $0.19
500+ $0.12 $0.12
1,000+ $0.08 $0.08
3,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC858CE6327HTSA1 Features

  • PNP silicon AF transistor for audio stages.
  • 30V collector-emitter voltage rating.
  • 100mA continuous collector current capability.
  • High DC current gain up to 800.
  • AEC Q101 qualified for automotive use.

BC858CE6327HTSA1 Applications

  • Ideal for AF input stage circuits.
  • Used in driver application circuits.
  • Suitable for low-noise audio amplification.
  • Works in general-purpose switching applications.

BC858CE6327HTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC858CE6327HTSA1?

The maximum collector-emitter voltage (VCEO) is 30V.

What is the maximum collector current rating?

The continuous collector current is 100mA, with a peak collector current of 200mA.

What package is the BC858CE6327HTSA1 available in?

It comes in a surface-mount SOT-23 package (TO-236-3, SC-59, SOT-23-3), with supplier device package PG-SOT23.

What is the operating temperature range?

The junction temperature is rated up to 150°C, and storage temperature range is -65°C to 150°C.

Is the BC858CE6327HTSA1 RoHS compliant?

Yes, the datasheet states it is Pb-free (RoHS compliant) and qualified according to AEC Q101.

What is the DC current gain (hFE) of this transistor?

The DC current gain ranges from 420 to 800 at Ic=2mA and Vce=5V, with a typical value of 520 (hFE group C).

What is the transition frequency of the BC858CE6327HTSA1?

The typical transition frequency is 250MHz.

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