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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,000 pcs
|
36000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC858CE6327 is a PNP bipolar junction transistor manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 30V and a continuous collector current rating of 100mA. Power dissipation is 330mW. The transistor offers a minimum DC current gain (hFE) of 420 at Ic=2mA and Vce=5V, with a maximum collector-emitter saturation voltage of 650mV at Ib=5mA and Ic=100mA. Transition frequency is 250MHz, making it suitable for switching and amplification applications up to moderate frequencies. The device is housed in a surface mount SOT-23 package (also known as TO-236 or SC-59) with a supplier device package designation of PG-SOT23. Operating junction temperature is up to 150°C. This transistor is commonly used in general purpose low-power circuits, signal processing, and portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.43 | $0.43 |
| 10+ | $0.30 | $0.30 |
| 100+ | $0.19 | $0.19 |
| 500+ | $0.12 | $0.12 |
| 1,000+ | $0.10 | $0.10 |
| 3,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
Surface mount SOT-23 (TO-236, SC-59) package.
150°C.
RoHS3 compliant (unverified).
Minimum 420 at Ic=2mA, Vce=5V.
250MHz.
Maximum 650mV at Ib=5mA, Ic=100mA.