BC858CE6327 PNP bipolar transistor with 30V Vce breakdown, 100mA Ic, and 330mW power dissipation. Surface mount in SOT23 package.
Mfr Part #:

BC858CE6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
PNP bipolar transistor with 30V Vce breakdown, 100mA Ic, and 330mW power dissipation. Surface mount in SOT23 package.
Total Stock: 36,000 pcs
$ Price Range: $0.09 - $0.43

BC858CE6327 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
36,000 pcs
36000 pcs On Request 1 On Request On Request 15+ On Request On Request

BC858CE6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC858CE6327 Description

Short technical summary and product information.

The BC858CE6327 is a PNP bipolar junction transistor manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 30V and a continuous collector current rating of 100mA. Power dissipation is 330mW. The transistor offers a minimum DC current gain (hFE) of 420 at Ic=2mA and Vce=5V, with a maximum collector-emitter saturation voltage of 650mV at Ib=5mA and Ic=100mA. Transition frequency is 250MHz, making it suitable for switching and amplification applications up to moderate frequencies. The device is housed in a surface mount SOT-23 package (also known as TO-236 or SC-59) with a supplier device package designation of PG-SOT23. Operating junction temperature is up to 150°C. This transistor is commonly used in general purpose low-power circuits, signal processing, and portable electronics.

BC858CE6327 Quick Information

Product Type: PNP Bipolar Transistor
Series: BC858C
Canonical Name: Infineon BC858CE6327 PNP Bipolar Transistor, 30V, 100mA, SOT23
Subcategory: PNP Transistor

BC858CE6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC858CE6327 Estimated Pricing

Qty Low High
1+ $0.43 $0.43
10+ $0.30 $0.30
100+ $0.19 $0.19
500+ $0.12 $0.12
1,000+ $0.10 $0.10
3,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC858CE6327 Features

  • PNP bipolar transistor in SOT23 package.
  • 30V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • Minimum hFE of 420 at 2mA.
  • 250MHz transition frequency.

BC858CE6327 Applications

  • General purpose switching and amplification.
  • Suitable for low-power circuits.
  • Used in portable electronics.
  • Ideal for signal processing.

BC858CE6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

30V.

What package is the BC858CE6327 available in?

Surface mount SOT-23 (TO-236, SC-59) package.

What is the maximum operating junction temperature?

150°C.

Is the BC858CE6327 RoHS compliant?

RoHS3 compliant (unverified).

What is the DC current gain (hFE)?

Minimum 420 at Ic=2mA, Vce=5V.

What is the transition frequency?

250MHz.

What is the collector-emitter saturation voltage?

Maximum 650mV at Ib=5mA, Ic=100mA.

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