BC858BWT1G The BC858BWT1G is a PNP silicon bipolar junction transistor from onsemi, designed for general-purpose amplifier applications. It features a 30V collector-emitter voltage, 100mA continuous collector current, and comes in a surface-mount SC-70-3 package.
Mfr Part #:

BC858BWT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BC858BWT1G is a PNP silicon bipolar junction transistor from onsemi, designed for general-purpose amplifier applications. It features a 30V collector-emitter voltage, 100mA continuous collector current, and comes in a surface-mount SC-70-3 package.
Total Stock: 4,154 pcs
$ Price Range: $0.04 - $0.18

BC858BWT1G Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,077 pcs
2077 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,077 pcs
2077 pcs On Request 1 On Request On Request On Request On Request On Request

BC858BWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector Current - Peak
Collector Cutoff Current (ICBO)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance Junction to Ambient (RθJA)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC858BWT1G Description

Short technical summary and product information.

The BC858BWT1G is a PNP silicon bipolar junction transistor manufactured by onsemi (formerly ON Semiconductor). It is designed for general-purpose amplifier applications and is housed in the SC-70/SOT-323 surface-mount package, which is optimized for low-power applications.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 30V, a maximum collector-base voltage (VCBO) of 30V, and a maximum emitter-base voltage (VEBO) of 5V. The continuous collector current is rated at 100mA, with a peak current capability of 130mA (1ms pulse). The transistor provides a minimum DC current gain (hFE) of 220 at IC=-2mA and VCE=-5V, and a typical transition frequency (fT) of 100MHz. The maximum collector-emitter saturation voltage (VCE(sat)) is 650mV at IC=-100mA and IB=-5mA.

 

Power dissipation is rated at 150mW on an FR-5 board, with a maximum junction-to-ambient thermal resistance of 883°C/W. The device operates over a junction temperature range of -55°C to +150°C. The BC858BWT1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, making it suitable for environmentally sensitive applications.

 

Typical applications include general-purpose amplification, signal switching, and low-power circuit designs. The compact SC-70-3 package (also known as SOT-323) allows for high-density board layouts in portable and space-constrained electronics.

BC858BWT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC858B
Canonical Name: BC858BWT1G PNP Bipolar Junction Transistor
Subcategory: Single PNP Transistor

BC858BWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC858BWT1G Estimated Pricing

Qty Low High
1+ $0.18 $0.18
10+ $0.11 $0.11
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.04 $0.04
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC858BWT1G Features

  • PNP silicon general-purpose transistor.
  • 30V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Surface-mount SC-70-3 package.
  • RoHS compliant and Pb-Free.

BC858BWT1G Applications

  • General-purpose amplifier circuits.
  • Low-power signal switching applications.
  • Portable and battery-operated devices.

BC858BWT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC858BWT1G?

The maximum collector-emitter voltage (VCEO) is 30V.

What is the maximum collector current rating?

The continuous collector current is 100mA, with a peak of 130mA (1ms pulse).

What is the package type for the BC858BWT1G?

The device is housed in an SC-70/SOT-323 surface-mount package, with a supplier device package of SC-70-3 (SOT323).

What is the operating temperature range?

The junction operating temperature range is -55°C to +150°C.

Is the BC858BWT1G RoHS compliant?

Yes, the device is RoHS3 compliant and also Pb-Free and Halogen Free/BFR Free.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain is 220 at IC=-2mA and VCE=-5V.

What is the transition frequency of the BC858BWT1G?

The typical transition frequency (fT) is 100MHz.

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