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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,275 pcs
|
5275 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cutoff Current (ICBO) | |
| Collector-Base Breakdown Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (VEBO) | |
| Frequency | |
| Marking | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Power Dissipation (Maximum @ When mounted on 7×5×0.6 mm ceramic board) | |
| Standard Package Quantity | |
| Storage Temperature (Minimum/Maximum) | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Transistor Type | |
| Vbe On (Minimum/Maximum @ VCE/IC=-5 V/-10 mA) | |
| Vce Sat (Maximum @ IC/IB=-10 mA/-0.5 mA) | |
| Vce Sat (Typical @ IC/IB=-100 mA/-5 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC858BWT106 is a PNP general purpose bipolar junction transistor manufactured by ROHM Semiconductor. Designed for general purpose amplification and switching applications, it provides a collector-emitter breakdown voltage of -30V and a continuous collector current rating of 100mA. The DC current gain (hFE) is a minimum of 210 at VCE=-5V and IC=-2mA, with a transition frequency of 250MHz, making it suitable for low to medium speed switching and amplification.
This transistor is housed in an SC-70 (SOT-323) surface mount package, also known as UMT3, which is ideal for space-constrained designs. The device is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel. Key electrical characteristics include a collector-emitter saturation voltage of -0.3V (max) at IC/IB=-10mA/-0.5mA, and an output capacitance of 4.5pF. The junction operating temperature range is -65°C to +150°C, with a maximum storage temperature of 150°C.
It is a complementary device to the NPN BC848B/BC848BW transistors, enabling the design of push-pull or complementary output stages. The marking on the part is G3K.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.60 | $0.60 |
| 10+ | $0.55 | $0.55 |
| 100+ | $0.51 | $0.51 |
| 500+ | $0.22 | $0.22 |
| 1,000+ | $0.16 | $0.16 |
| 3,000+ | $0.11 | $0.11 |
| 6,000+ | $0.10 | $0.10 |
| 9,000+ | $0.09 | $0.09 |
| 24,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is -30V (minimum).
The minimum DC current gain (hFE) is 210 at VCE=-5V, IC=-2mA. Typical value is 480.
The package is SC-70 (SOT-323), also known as UMT3. It is a surface mount package.
The maximum junction temperature is 150°C. The storage temperature range is -65°C to +150°C.
RoHS compliance is listed as RoHS3 Compliant, but this is unverified.