BC858BWT106 BC858BWT106 is a PNP general purpose transistor from ROHM Semiconductor. It features a VCEO of -30V, collector current of 100mA, and DC current gain of 210 minimum.
Mfr Part #:

BC858BWT106

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
BC858BWT106 is a PNP general purpose transistor from ROHM Semiconductor. It features a VCEO of -30V, collector current of 100mA, and DC current gain of 210 minimum.
Total Stock: 5,275 pcs
$ Price Range: $0.08 - $0.60

BC858BWT106 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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5,275 pcs
5275 pcs On Request 1 On Request On Request 24+ On Request On Request

BC858BWT106 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current (ICBO)
Collector-Base Breakdown Voltage (VCBO)
Collector-Emitter Breakdown Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage (VEBO)
Frequency
Marking
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Power Dissipation (Maximum @ When mounted on 7×5×0.6 mm ceramic board)
Standard Package Quantity
Storage Temperature (Minimum/Maximum)
Supplier Device Package
Supplier Package
Tape & Reel
Transistor Type
Vbe On (Minimum/Maximum @ VCE/IC=-5 V/-10 mA)
Vce Sat (Maximum @ IC/IB=-10 mA/-0.5 mA)
Vce Sat (Typical @ IC/IB=-100 mA/-5 mA)
Vce Saturation (Max) @ Ib, Ic
Voltage

BC858BWT106 Description

Short technical summary and product information.

The BC858BWT106 is a PNP general purpose bipolar junction transistor manufactured by ROHM Semiconductor. Designed for general purpose amplification and switching applications, it provides a collector-emitter breakdown voltage of -30V and a continuous collector current rating of 100mA. The DC current gain (hFE) is a minimum of 210 at VCE=-5V and IC=-2mA, with a transition frequency of 250MHz, making it suitable for low to medium speed switching and amplification.

 

This transistor is housed in an SC-70 (SOT-323) surface mount package, also known as UMT3, which is ideal for space-constrained designs. The device is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel. Key electrical characteristics include a collector-emitter saturation voltage of -0.3V (max) at IC/IB=-10mA/-0.5mA, and an output capacitance of 4.5pF. The junction operating temperature range is -65°C to +150°C, with a maximum storage temperature of 150°C.

 

It is a complementary device to the NPN BC848B/BC848BW transistors, enabling the design of push-pull or complementary output stages. The marking on the part is G3K.

BC858BWT106 Quick Information

Product Type: PNP General Purpose Transistor
Canonical Name: BC858BWT106 PNP General Purpose Transistor
Subcategory: PNP General Purpose

BC858BWT106 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC858BWT106 Estimated Pricing

Qty Low High
1+ $0.60 $0.60
10+ $0.55 $0.55
100+ $0.51 $0.51
500+ $0.22 $0.22
1,000+ $0.16 $0.16
3,000+ $0.11 $0.11
6,000+ $0.10 $0.10
9,000+ $0.09 $0.09
24,000+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC858BWT106 Features

  • PNP general purpose bipolar junction transistor.
  • Collector-emitter breakdown voltage of -30V.
  • Continuous collector current rating of 100mA.
  • DC current gain (hFE) minimum of 210.
  • 250MHz transition frequency for switching.

BC858BWT106 Applications

  • General purpose signal amplification circuits.
  • Low-speed load switching applications.
  • Complementary pair with BC848B/BC848BW.
  • Ideal for space-constrained surface mount designs.
  • Used in consumer and industrial electronics.

BC858BWT106 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage (VCEO) of BC858BWT106?

The collector-emitter breakdown voltage (VCEO) is -30V (minimum).

What is the DC current gain (hFE) of BC858BWT106?

The minimum DC current gain (hFE) is 210 at VCE=-5V, IC=-2mA. Typical value is 480.

What is the package type for BC858BWT106?

The package is SC-70 (SOT-323), also known as UMT3. It is a surface mount package.

What is the operating junction temperature range?

The maximum junction temperature is 150°C. The storage temperature range is -65°C to +150°C.

Is the BC858BWT106 RoHS compliant?

RoHS compliance is listed as RoHS3 Compliant, but this is unverified.

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