BC858BLT1 BC858BLT1 is a PNP silicon bipolar transistor from onsemi, rated for -30 V collector-emitter voltage and -100 mA continuous collector current. Housed in a SOT-23 surface mount package.
Mfr Part #:

BC858BLT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC858BLT1 is a PNP silicon bipolar transistor from onsemi, rated for -30 V collector-emitter voltage and -100 mA continuous collector current. Housed in a SOT-23 surface mount package.
Total Stock: 5,098 pcs
$ Price Range: $0.04

BC858BLT1 Available from 1 distributor

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BC858BLT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Case Code
Collector Cutoff Current (ICBO)
Collector-Base Breakdown Voltage (V(BR)CBO)
Collector-Base Voltage (VCBO)
Collector-Emitter Breakdown Voltage (V(BR)CEO)
Collector-Emitter Voltage (VCEO)
DC Current Gain (hFE)
Emitter-Base Breakdown Voltage (V(BR)EBO)
Emitter-Base Voltage (VEBO)
Halogen Free
IC (Maximum)
Industrial Grade
Junction and Storage Temperature Range
Lead Style
Medical Grade
Military Grade
Mounting Type
PD (Maximum @ TA = 25 °C, Alumina Substrate)
PD (Maximum @ TA = 25 °C, FR -5 Board)
Package Type
RthJA (Maximum @ Alumina Substrate)
RthJA (Maximum @ FR -5 Board)
SVHC Present
Storage Temperature
Tape & Reel
Termination Style

BC858BLT1 Description

Short technical summary and product information.

The BC858BLT1 is a PNP silicon bipolar junction transistor from onsemi, part of the BC858 series. It features a maximum collector-emitter voltage (VCEO) of -30 V and a continuous collector current rating of -100 mA, with a peak current capability of -200 mA. The device is designed for general purpose switching and amplification applications.

 

Electrical characteristics include a collector-base breakdown voltage of -30 V minimum and an emitter-base breakdown voltage of -5 V minimum. The collector cutoff current is typically -15 nA at -30 V VCB. The transistor is capable of dissipating up to 225 mW on an FR-5 board and 300 mW on an alumina substrate at 25°C ambient temperature.

 

The BC858BLT1 is offered in the industry-standard SOT-23 (TO-236) surface mount package, case code 318, with gull wing leads for easy PCB assembly. It is Pb-free, halogen free/BFR free, and RoHS compliant, making it suitable for environmentally conscious designs.

BC858BLT1 Quick Information

Product Type: Bipolar Transistor (BJT) - Single
Series: BC858
Canonical Name: BC858BLT1 PNP Silicon Transistor
Subcategory: General Purpose Transistor

BC858BLT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BC858BLT1 Estimated Pricing

Qty Low High
7,869+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC858BLT1 Features

  • PNP silicon bipolar junction transistor.
  • Maximum collector-emitter voltage of -30 V.
  • Continuous collector current rating of -100 mA.
  • Surface mount SOT-23 (TO-236) package.
  • RoHS compliant and Pb-free.

BC858BLT1 Applications

  • General purpose switching and amplification.
  • Low power signal processing circuits.
  • Portable and battery-powered electronics.
  • Consumer and industrial control systems.

BC858BLT1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC858BLT1?

The maximum collector-emitter voltage (VCEO) is -30 V.

What is the continuous collector current rating of the BC858BLT1?

The continuous collector current (IC) is -100 mA, with a peak rating of -200 mA.

What package type is the BC858BLT1 available in?

The BC858BLT1 is available in a SOT-23 (TO-236) surface mount package.

Is the BC858BLT1 RoHS compliant?

Yes, the BC858BLT1 is RoHS compliant, Pb-free, and halogen free/BFR free as stated in the datasheet.

What is the operating temperature range for the BC858BLT1?

The junction and storage temperature range is -55°C to +150°C.

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