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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,892 pcs
|
10892 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC858BE6327 is a PNP bipolar junction transistor manufactured by Infineon Technologies. It has a maximum collector-emitter voltage of 30V and a continuous collector current rating of 100mA. The device can dissipate up to 330mW of power. With a DC current gain (hFE) of 220 minimum at 2mA collector current and 5V Vce, and a transition frequency of 250MHz, it is suitable for general-purpose switching and amplification applications.
The transistor is designed for surface mount assembly and is available in the SOT23 package (also referred to as TO-236-3 or SC-59). The operating junction temperature range is up to 150°C. The product is RoHS3 compliant, REACH unaffected, and has a moisture sensitivity level of 1 (unlimited).
Typical applications include signal amplification, switching circuits, and driver stages in various electronic devices. The compact SOT23 package allows for high-density PCB designs.
| Qty | Low | High |
|---|---|---|
| 45,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
100mA.
330mW.
TO-236-3, SC-59, SOT-23-3.
150°C maximum.
Yes, RoHS3 compliant.
Minimum 220 at Ic=2mA, Vce=5V.