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BC858B The Infineon BC858B is a PNP bipolar transistor designed for general-purpose applications. It features a 30V collector-emitter breakdown voltage and a 100mA collector current.
Mfr Part #:

BC858B

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon BC858B is a PNP bipolar transistor designed for general-purpose applications. It features a 30V collector-emitter breakdown voltage and a 100mA collector current.
✓ Total Stock: 2,454 pcs
$ Price Range: $0.99

BC858B Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
2,454 pcs
On Request
2454 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BC858B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BC858B Description

Short technical summary and product information.

The Infineon BC858B is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 30V and can handle a maximum collector current of 100mA.

 

This transistor operates with a maximum power dissipation of 300mW and has a frequency response up to 200MHz. The Vce saturation is specified at 650mV with a base current of 5mA and collector current of 100mA. Its DC current gain (hFE) is a minimum of 220 at 2mA collector current and 5V Vce.

 

The BC858B is housed in a surface-mount SOT-23-3 package, making it suitable for compact circuit designs. It is supplied in tape and reel packaging for automated assembly processes.

BC858B Quick Information

Product Type: Bipolar Transistor
Series: BC858
Canonical Name: BC858B PNP Bipolar Transistor
Subcategory: Single Bipolar Transistors

BC858B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC858B Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC858B Features

  • PNP bipolar junction transistor.
  • 30V collector-emitter breakdown voltage.
  • 100mA maximum collector current.
  • 300mW maximum power dissipation.
  • Surface mount SOT-23-3 package.

BC858B Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for driver and interface circuits.
  • Common in portable battery-powered devices.

BC858B FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the BC858B?

The collector-emitter breakdown voltage is 30V.

What is the maximum collector current for the BC858B?

The maximum collector current is 100mA.

What is the power dissipation of the BC858B transistor?

The maximum power dissipation is 300mW.

What type of package is the BC858B supplied in?

The BC858B is supplied in a SOT-23-3 surface mount package.

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