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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,454 pcs
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2454 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC858B is a PNP general-purpose bipolar junction transistor manufactured by Infineon Technologies. It is designed for low-power amplification and switching applications in surface-mount assemblies.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 30V, a maximum collector current (Ic) of 100mA, and a maximum power dissipation (Pd) of 250mW. The device offers a minimum DC current gain (hFE) of 220 at Ic=2mA and Vce=5V, with a typical transition frequency (fT) of 100MHz. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 650mV at Ib=5mA and Ic=100mA.
The transistor is housed in a SOT-23-3 surface-mount package (also designated as TO-236-3 or SC-59) and supports an operating junction temperature range of -55°C to 150°C. It is suitable for general-purpose signal amplification, driver stages, and low-current switching in consumer, industrial, and automotive electronics.
The maximum collector-emitter voltage (Vce) is 30V.
The maximum collector current (Ic) is 100mA.
The BC858B is available in a SOT-23-3 surface-mount package (also designated as TO-236-3 or SC-59).
The operating junction temperature range is -55°C to 150°C.
The BC858B is listed as RoHS3 Compliant, but this status is unverified and has low confidence.
The typical transition frequency (fT) is 100MHz.
The minimum hFE is 220 at Ic=2mA and Vce=5V.