BC858B BC858B is a PNP general-purpose bipolar transistor from Infineon Technologies. It features a maximum collector-emitter voltage of 30V, collector current of 100mA, and power dissipation of 250mW in a SOT-23-3 surface-mount package.
Mfr Part #:

BC858B

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
BC858B is a PNP general-purpose bipolar transistor from Infineon Technologies. It features a maximum collector-emitter voltage of 30V, collector current of 100mA, and power dissipation of 250mW in a SOT-23-3 surface-mount package.
Total Stock: 2,454 pcs

BC858B Available from 1 distributor

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BC858B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC858B Description

Short technical summary and product information.

The BC858B is a PNP general-purpose bipolar junction transistor manufactured by Infineon Technologies. It is designed for low-power amplification and switching applications in surface-mount assemblies.

 

Key electrical specifications include a maximum collector-emitter voltage (Vce) of 30V, a maximum collector current (Ic) of 100mA, and a maximum power dissipation (Pd) of 250mW. The device offers a minimum DC current gain (hFE) of 220 at Ic=2mA and Vce=5V, with a typical transition frequency (fT) of 100MHz. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 650mV at Ib=5mA and Ic=100mA.

 

The transistor is housed in a SOT-23-3 surface-mount package (also designated as TO-236-3 or SC-59) and supports an operating junction temperature range of -55°C to 150°C. It is suitable for general-purpose signal amplification, driver stages, and low-current switching in consumer, industrial, and automotive electronics.

BC858B Quick Information

Product Type: Bipolar Transistor
Series: BC858B
Canonical Name: BC858B PNP General-Purpose Transistor
Subcategory: General Purpose PNP

BC858B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC858B Features

  • PNP bipolar junction transistor design.
  • Maximum collector-emitter voltage 30V.
  • Maximum collector current 100mA.
  • Minimum DC current gain (hFE) of 220.
  • Surface-mount SOT-23-3 package.

BC858B Applications

  • General-purpose signal amplification circuits.
  • Low-current switching applications.
  • Driver stages in audio equipment.
  • Used in consumer and industrial electronics.

BC858B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC858B?

The maximum collector-emitter voltage (Vce) is 30V.

What is the maximum collector current of the BC858B?

The maximum collector current (Ic) is 100mA.

What is the package type of the BC858B?

The BC858B is available in a SOT-23-3 surface-mount package (also designated as TO-236-3 or SC-59).

What is the operating temperature range of the BC858B?

The operating junction temperature range is -55°C to 150°C.

Is the BC858B RoHS compliant?

The BC858B is listed as RoHS3 Compliant, but this status is unverified and has low confidence.

What is the typical transition frequency of the BC858B?

The typical transition frequency (fT) is 100MHz.

What is the minimum DC current gain (hFE) of the BC858B?

The minimum hFE is 220 at Ic=2mA and Vce=5V.

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